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DSA1103

更新时间: 2022-12-29 19:17:25
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
28页 598K
描述
Low-Jitter Precision LVDS Oscillator for Automotive

DSA1103 数据手册

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DSA1103/23  
1.0  
ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings †  
Input Voltage, VIN .............................................................................................................................. –0.3V to VDD +0.3V  
Supply Voltage .........................................................................................................................................0.3V to + 4.0V  
ESD Protection (HBM) ...............................................................................................................................................4 kV  
ESD Protection (MM) ............................................................................................................................................... 400V  
ESD Protection (CDM) ............................................................................................................................................1.5 kV  
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated  
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended  
periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS  
Electrical Characteristics: VDD = 3.3V; TA = +25°C unless otherwise specified.  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Units Conditions  
Supply Voltage (Note 1)  
VDD  
2.25  
3.6  
V
DSA1103, EN pin low. Output is  
disabled and device is in  
standby  
0.095  
Supply Current  
IDD  
mA  
DSA1123, EN pin low, output is  
disabled  
20  
22  
±10  
±20  
±25  
Grade 2 and Grade 3 only  
Includes frequency  
Frequency Stability  
Δf  
ppm  
variations due to initial  
tolerance, temp. and  
power supply voltage.  
±50  
Aging - First year  
ΔfY1  
ΔfY2  
tSU  
±5  
ppm One year @ 25°C  
Aging - After first year  
Startup Time (Note 2)  
<±1  
ppm/yr Year two and beyond at +25°C  
5
ms  
V
T = +25°C  
Input logic high  
Input logic low  
VIH  
VIL  
0.75 x VDD  
Input Logic Levels  
0.25 x VDD  
V
Output Disable Time (Note 3)  
Output Enable Time  
tDS  
5
5
ns  
ms  
ns  
DSA1103  
DSA1123  
tEN  
20  
Enable Pull-Up Resistor  
(Note 4)  
40  
kΩ  
Internally pulled-up  
LVDS Output  
Supply Current  
IDD  
VOS  
ΔVOS  
VPP  
1.125  
29  
32  
1.4  
mA  
V
Output enabled, RL = 100Ω  
R = 100Ω differential  
Output Offset Voltage  
Delta Offset Voltage  
Peak-to-Peak Output Swing  
Output Logic Level High  
Output Logic Level Low  
50  
mV  
mV  
V
350  
Single-ended  
VOH  
VOL  
0.9 x VDD  
I = ±6 mA  
0.1 x VDD  
V
Output Transition Rise Time  
(Note 3)  
tR  
tF  
20% to 80%, RL = 50Ω,  
CL = 2 pF  
200  
ps  
Output Transition Fall Time  
(Note 3)  
2.3  
3.3  
460  
460  
–40°C to +85°C  
Frequency  
fO  
MHz  
–40°C to +105°C  
and –40°C to +125°C  
DS20005891A-page 2  
2019 Microchip Technology Inc.  

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