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DS9502 PDF预览

DS9502

更新时间: 2024-09-24 22:40:39
品牌 Logo 应用领域
达拉斯 - DALLAS 二极管
页数 文件大小 规格书
3页 69K
描述
ESD Protection Diode

DS9502 数据手册

 浏览型号DS9502的Datasheet PDF文件第2页浏览型号DS9502的Datasheet PDF文件第3页 
DS9502  
ESD Protection Diode  
www.dalsemi.com  
SPECIAL FEATURES  
§ Zener characteristic with voltage snap–back  
to protect against ESD hits  
SYMBOL AND CONVENTIONS  
C
IC  
§ High avalanche voltage, low leakage and low  
VCA  
capacitance avoid signal attenuation  
A
§ Compatible to all 5V logic families  
PACKAGE OUTLINE  
§ Space saving, low inductance TSOC surface  
mount package  
TSOC SURFACE MOUNT PACKAGE  
§ Symmetric dual–port bondout to maximize  
1
2
3
6
5
4
energy dissipation in protection device  
SIDE VIEW  
§ Industrial temperature range  
TOP VIEW  
3.7 X 4.0 X 1.5 mm  
See Mech. Drawings  
Section  
ORDERING INFORMATION  
DS9502P  
6-lead TSOC package  
DESCRIPTION  
This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable  
memory modules. The memory chips used for these modules have already a strong ESD–protection  
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than  
27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the  
DS9502 will eventually fail “short” thus preventing further damage.  
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds  
the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher  
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage  
is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the  
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a  
small leakage current.  
1 of 3  
102199  

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