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DS90UR904Q-Q1 PDF预览

DS90UR904Q-Q1

更新时间: 2023-09-03 20:28:56
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
44页 1220K
描述
10MHz 至 43MHz 18 位色彩 FPD-Link II 解串器

DS90UR904Q-Q1 数据手册

 浏览型号DS90UR904Q-Q1的Datasheet PDF文件第3页浏览型号DS90UR904Q-Q1的Datasheet PDF文件第4页浏览型号DS90UR904Q-Q1的Datasheet PDF文件第5页浏览型号DS90UR904Q-Q1的Datasheet PDF文件第7页浏览型号DS90UR904Q-Q1的Datasheet PDF文件第8页浏览型号DS90UR904Q-Q1的Datasheet PDF文件第9页 
DS90UR903Q-Q1, DS90UR904Q-Q1  
ZHCSB31C AUGUST 2011REVISED JUNE 2014  
www.ti.com.cn  
6 Specifications  
(1) (2)  
6.1 Absolute Maximum Ratings  
PARAMETER  
MIN  
0.3  
0.3  
0.3  
0.3  
0.3  
MAX  
+2.5  
UNIT  
V
Supply Voltage – VDDn (1.8V)  
Supply Voltage – VDDIO  
+4.0V  
V
LVCMOS Input Voltage I/O Voltage  
(VDDIO + 0.3V)  
(VDD + 0.3V)  
(VDD + 0.3V)  
+150  
V
CML Driver I/O Voltage (VDD  
)
V
CML Receiver I/O Voltage (VDD  
)
V
Junction Temperature  
°C  
°C/W  
Maximum Package Power Dissipation Capacity  
1/θJA above +25°  
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of  
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or  
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating  
Conditions indicate conditions at which the device is functional; the device should not be operated beyond such conditions.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
6.2 Handling Ratings  
MIN  
–65  
-8  
MAX  
150  
+8  
UNIT  
Tstg  
Storage temperature range  
Electrostatic discharge  
°C  
Human body model (HBM), per AEC Q100-002(1)  
Charged device model (CDM), per AEC Q100-011  
Machine Model (MM)  
kV  
V
V(ESD)  
-1  
+1  
-250  
-25  
+250  
+25  
Air Discharge  
(DOUT+, DOUT-, RIN+, RIN-)  
ESD Rating (IEC 61000-4-2)  
RD = 330, CS = 150pF  
Contact Discharge  
(DOUT+, DOUT-, RIN+, RIN-)  
-10  
-15  
-10  
+10  
+15  
+10  
kV  
Air Discharge  
(DOUT+, DOUT-, RIN+, RIN-)  
ESD Rating (ISO10605)  
RD = 330, CS = 150/330pF  
RD = 2K, CS = 150/330pF  
Contact Discharge  
(DOUT+, DOUT-, RIN+, RIN-)  
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
6.3 Recommended Operating Conditions  
MIN  
1.71  
1.71  
3.0  
NOM  
1.8  
MAX  
1.89  
1.89  
3.6  
UNIT  
V
Supply Voltage (VDDn  
)
LVCMOS Supply Voltage (VDDIO) (1.8V)  
LVCMOS Supply Voltage (VDDIO) (3.3V)  
Supply Noise  
1.8  
V
3.3  
V
VDDn (1.8V)  
VDDIO (1.8V)  
VDDIO (3.3V)  
25  
mVp-p  
mVp-p  
mVp-p  
°C  
25  
50  
Operating Free Air Temperature (TA)  
PCLK Clock Frequency  
-40  
10  
+25  
+105  
43  
MHz  
6
Copyright © 2011–2014, Texas Instruments Incorporated  

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