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DS1855B-020 PDF预览

DS1855B-020

更新时间: 2022-11-26 01:17:17
品牌 Logo 应用领域
达拉斯 - DALLAS 电位器存储
页数 文件大小 规格书
20页 252K
描述
Dual Nonvolatile Digital Potentiometer and Secure Memory

DS1855B-020 数据手册

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DS1855  
MEMORY ORGANIZATION  
The DS1855’s serial EEPROM is internally organized with 256 words of 1 byte each. Each word requires  
an 8-bit address for random word addressing. The byte at address F9h determines the wiper setting for  
potentiometer 0, which contains 100 positions. Writing values above 63h to this address sets the wiper to  
its uppermost position, but the MSB is ignored. The byte at address F8h determines the wiper setting for  
potentiometer 1, which contains 256 positions (00h to FFh). Address locations FAh though FFh are  
reserved and should not be written.  
MEMORY  
NAME OF  
MEMORY  
LOCATION  
FUNCTION OF MEMORY LOCATION  
LOCATION  
00h – F7h  
F8h  
User Memory  
General-purpose user memory.  
Potentiometer 1 Setting Writing to this byte controls the setting of potentiometer 1, a 256-  
position pot. Valid settings are 00h to FFh.  
F9h  
Potentiometer 0 Setting Writing to this byte controls the setting of potentiometer 0, a 100-  
position pot. Valid settings are 00h to 63h. MSB is ignored.  
FAh  
Software Lock  
The three lower bits in this byte can be used to set write-protection  
to the 256-byte memory block.  
Configuration Byte  
B2 B1 B0  
B2: Writing this bit to a 1 protects the upper page of memory. If  
this bit is set, memory locations F8h to FFh are configured for  
write-protection.  
B1: Writing this bit to a 1 protects the upper block of memory. If  
this bit is set, memory locations 80h to F7h are configured for  
write-protection. The upper page must be unlocked in order to  
modify the locking of this portion of memory.  
B0: Writing this bit to a 1 protects the lower block of memory. If  
this bit is set, memory locations 00h to 7Fh are configured for  
write-protection. The upper page must be unlocked in order to  
modify the locking of this portion of memory.  
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