DS1345W

更新时间： 2024-02-09 15:43:57

品牌	Logo	应用领域
达拉斯 - DALLAS		电池内存集成电路静态存储器监控
页数	文件大小	规格书
12页	250K
描述
3.3V 1024k Nonvolatile SRAM with Battery Monitor

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技术参数
数据手册

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DS1345W 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.41	风险等级：	5.44
Base Number Matches：	1

DS1345W 数据手册

DS1345W

ABSOLUTE MAXIMUM RATINGS*

Voltage On Any Pin Relative To Ground

Operating Temperature

-0.3V to +4.6V

0°C to 70°C, -40°C to +85°C for IND parts

Storage Temperature

-40°C to +70°C, -40°C to +85°C for IND parts

260°C for 10 seconds

Soldering Temperature

* This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods of time may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

(T_A: See Note 10)

PARAMETER

Power Supply Voltage

Logic 1

SYMBOL

V_CC

MIN

3.0

TYP

MAX

3.6

V_CC

0.4

UNITS

NOTES

3.3

V_IH

V_IL

2.2

0.0

Logic 0

DC ELECTRICAL CHARACTERISTICS

(T_A: See Note 10) (V_CC= 3.3V M 0.3V)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

NOTES

Input Leakage Current

I/O Leakage Current

CE O V_IH? V_CC

I_IL

-1.0

+1.0

µA

I_IO

-1.0

+1.0

µA

Output Current @ 2.2V

Output Current @ 0.4V

Standby Current CE = 2.2V

Standby Current

I_OH

I_OL

I_CCS1

-1.0

2.0

µA

250

150

I_CCS2

µA

CE = V_CC-0.2V

Operating Current

I_CCO1

V_TP

3.0

Write Protection Voltage

2.8

2.9

CAPACITANCE

PARAMETER

(T_A= 25°C)

SYMBOL

C_IN

MIN

TYP

MAX

UNITS

NOTES

Input Capacitance

Input/Output Capacitance

C_I/O

4 of 12

1 2 345 6 7...12

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