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DS-11802D4-104Y PDF预览

DS-11802D4-104Y

更新时间: 2024-01-05 18:56:49
品牌 Logo 应用领域
其他 - ETC 转换器
页数 文件大小 规格书
7页 227K
描述
Converter

DS-11802D4-104Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:CERAMIC, DDIP-28
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.88最大角精度:2 arc min
转换器类型:DIGITAL TO SYNCHRO OR RESOLVERJESD-30 代码:R-CDIP-T28
JESD-609代码:e0长度:35.56 mm
最大负电源电压:-16.5 V最小负电源电压:-13.5 V
标称负供电电压:-15 V位数:16
功能数量:1端子数量:28
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.82 mm信号/输出频率:1000 Hz
最大供电电压:16.5 V最小供电电压:13.5 V
标称供电电压:15 V表面贴装:NO
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

DS-11802D4-104Y 数据手册

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DS1200  
Serial RAM Chip  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
C 1024 Bits of Read/Write Memory  
C Low Data Retention Current for Battery  
Backup Applications  
C Four Million Bits/Second Data Rate  
C Single-Byte or Multiple-Byte Data Transfer  
Capability  
C No Restrictions on the Number of Write  
Cycles  
16-Pin SO (300mil)  
C Low-Power CMOS Circuitry  
See Mech. Drawings Section  
APPLICATIONS  
C Software Authorization  
C Computer Identification  
C System Access Control  
C Secure Personnel Areas  
C Calibration  
PIN DESCRIPTION  
VCC  
- +5V  
RST  
- Reset  
C Automatic System Setup  
C Traveling Work Record  
DQ  
- Data Input/Output  
- Clock  
CLK  
GND  
VBAT  
NC  
- Ground  
- Battery (+)  
- No Connection  
DESCRIPTION  
The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual  
8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a  
microprocessor is minimized by on-chip circuitry, which permits data transfers with only three signals:  
CLK, RST , and DQ.  
Nonvolatility can be achieved by connecting a battery of 2V to 4V at the battery input VBAT. A load of  
0.5ꢀꢁꢂshould be used to size the external battery for the required data retention time. If nonvolatility is  
not required the VBAT pin should be grounded.  
1 of 7  
092702  

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