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DRV8824RHDR PDF预览

DRV8824RHDR

更新时间: 2024-01-08 14:37:12
品牌 Logo 应用领域
德州仪器 - TI 电子电机驱动信号电路驱动器运动控制电子器件
页数 文件大小 规格书
22页 742K
描述
具有电流调节功能和 1/32 微步进的 45V、1.6A 双极步进电机驱动器   | RHD | 28 | -40 to 85

DRV8824RHDR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HVQCCN, LCC28,.2SQ,20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:0.75模拟集成电路 - 其他类型:STEPPER MOTOR CONTROLLER
JESD-30 代码:S-PQCC-N28JESD-609代码:e4
长度:5 mm湿度敏感等级:2
功能数量:1端子数量:28
最高工作温度:85 °C最低工作温度:-40 °C
最大输出电流:1.6 A封装主体材料:PLASTIC/EPOXY
封装代码:HVQCCN封装等效代码:LCC28,.2SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:24 V
认证状态:Not Qualified座面最大高度:0.9 mm
子类别:Motion Control Electronics最大供电电流 (Isup):8 mA
最大供电电压 (Vsup):45 V最小供电电压 (Vsup):8.2 V
标称供电电压 (Vsup):24 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmBase Number Matches:1

DRV8824RHDR 数据手册

 浏览型号DRV8824RHDR的Datasheet PDF文件第2页浏览型号DRV8824RHDR的Datasheet PDF文件第3页浏览型号DRV8824RHDR的Datasheet PDF文件第4页浏览型号DRV8824RHDR的Datasheet PDF文件第6页浏览型号DRV8824RHDR的Datasheet PDF文件第7页浏览型号DRV8824RHDR的Datasheet PDF文件第8页 
DRV8824  
www.ti.com  
SLVSA06E OCTOBER 2009REVISED AUGUST 2011  
THERMAL INFORMATION  
DRV8824  
THERMAL METRIC  
PWP  
28 PINS  
38.9  
UNITS  
θJA  
Junction-to-ambient thermal resistance(1)  
Junction-to-case (top) thermal resistance(2)  
Junction-to-board thermal resistance(3)  
Junction-to-top characterization parameter(4)  
Junction-to-board characterization parameter(5)  
Junction-to-case (bottom) thermal resistance(6)  
θJCtop  
θJB  
23.3  
21.2  
°C/W  
ψJT  
0.8  
ψJB  
20.9  
θJCbot  
2.6  
(1) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as  
specified in JESD51-7, in an environment described in JESD51-2a.  
(2) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific  
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
(3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB  
temperature, as described in JESD51-8.  
(4) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).  
(5) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).  
(6) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific  
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
RECOMMENDED OPERATING CONDITIONS  
MIN  
8.2  
1
NOM  
MAX  
45  
UNIT  
V
VM  
Motor power supply voltage range(1)  
VREF input voltage(2)  
VREF  
IV3P3  
3.5  
1
V
V3P3OUT load current  
mA  
(1) All VM pins must be connected to the same supply voltage.  
(2) Operational at VREF between 0 V and 1 V, but accuracy is degraded.  
ELECTRICAL CHARACTERISTICS  
over operating free-air temperature range of -40°C to 85°C (unless otherwise noted)  
PARAMETER  
POWER SUPPLIES  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
IVM  
VM operating supply current  
VM sleep mode supply current  
VM = 24 V, fPWM < 50 kHz  
5
10  
8
20  
mA  
μA  
V
IVMQ  
VUVLO  
V3P3OUT REGULATOR  
VM = 24 V  
VM undervoltage lockout voltage VM rising  
7.8  
8.2  
IOUT = 0 to 1 mA, VM = 24 V, TJ = 25°C  
3.18  
3.10  
3.30  
3.30  
3.42  
3.50  
V3P3  
V3P3OUT voltage  
V
IOUT = 0 to 1 mA  
LOGIC-LEVEL INPUTS  
VIL  
VIH  
VHYS  
IIL  
Input low voltage  
0.6  
0.7  
V
V
Input high voltage  
Input hysteresis  
Input low current  
Input high current  
2
5.25  
0.45  
V
VIN = 0  
20  
20  
μA  
μA  
kΩ  
MΩ  
IIH  
VIN = 3.3 V  
100  
nENBL, nRESET, DIR, STEP, MODEx  
nSLEEP  
100  
1
RPD  
Internal pulldown resistance  
nHOME, nFAULT OUTPUTS (OPEN-DRAIN OUTPUTS)  
VOL  
IOH  
Output low voltage  
IO = 5 mA  
VO = 3.3 V  
0.5  
1
V
Output high leakage current  
μA  
DECAY INPUT  
Copyright © 20092011, Texas Instruments Incorporated  
5

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