5秒后页面跳转
捷配首页

Datasheet > DRA4143Z0A
DRA4143Z0A PDF预览

DRA4143Z0A

更新时间： 2024-10-03 14:49:07
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
2页 271K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

阅读下载

中文翻译

获取价格

DRA4143Z0A 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.75Is Samacsys：N
其他特性：BUILT IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.3 W
子类别：BIP General Purpose Small Signal表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DRA4143Z0A 数据手册

 浏览型号DRA4143Z0A的Datasheet PDF文件第2页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRA4143Z  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRC4143Z  
DRA2143Z in NS through hole type package  
ꢀPackage  
ꢀCode  
Features  
High forward current transfer ratio hFE  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
NS-B2-B-B  
Package dimension clicks here.→  
Click!  
e  
1itter  
2: Collector  
3: Base  
Packaging  
DRA4143Z0A Radial type: 5000 pcs / carton  
ꢀAbsolute Maximum Ratings T = 25°C  
a
ꢀMarking Symbol: L8  
ꢀInternal Connection  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base ope)  
Collector current  
Smbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Uit  
V
C
E
–0  
V
R1  
B
100  
mA  
mW  
°C  
R2  
Total power dissipation  
P
300  
Junction temperature  
150  
R1  
R2  
4.7  
47  
kΩ  
kΩ  
Resistance value  
Storage tperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Chastics T = 25°C±3°C  
a
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltagr open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
400  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
80  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–1.3  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.4  
+30%  
0.12  
V
Input resistance  
R1  
–30%  
0.08  
4.7  
kΩ  
Resistance ratio  
R1 / R2  
0.10  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2012  
Ver. AED  
1
12

中文翻译

下载PDF

与DRA4143Z0A相关器件

型号 品牌 获取价格 描述 数据表
DRA4144E PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, NS-B1
DRA4144E0A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRA4144T PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, NS-B1
DRA4144T0A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRA4144V PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, NS-B1
DRA4144W0A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRA4152Z PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, NS-B1
DRA4152Z0A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRA4514E PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B
DRA4523Y PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B

与DRA4143Z0A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证