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DRA4144W0A PDF预览

DRA4144W0A

更新时间： 2024-10-03 21:10:27
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
2页 270K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

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DRA4144W0A 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.75其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.3 W子类别：BIP General Purpose Small Signal
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DRA4144W0A 数据手册

 浏览型号DRA4144W0A的Datasheet PDF文件第2页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRA4144W  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRC4144W  
DRA2144W in NS through hole type package  
Features  
ꢀPackage  
ꢀCode  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
NS-B2-B-B  
Package dimension clicks here.→  
Click!  
Packaging  
e  
1: Emitter  
2: Collector  
3: Base  
DRA4144W0A Radial type: 5000 pcs / carton  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base pen)  
Collector current  
Symbol  
VO  
VCEO  
IC  
Rating  
–50  
Unit  
V
ꢀMarking Symbol: LK  
ꢀInternal Connection  
–50  
V
C
E
R1  
–10
mA  
mW  
°C  
B
R2  
Total power dissipation  
PT  
30  
Junction temperature  
150  
Storage temperaure  
–55 to +150  
°C  
R1  
R2  
47  
22  
kΩ  
kΩ  
Resistance value  
ꢀElectrical Characteristics T = 25C±3°C  
P
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base vopen)  
Collector-emitter volte open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
60  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–4.4  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
–1.2  
+30%  
2.60  
V
Input resistance  
R1  
–30%  
1.70  
47  
kΩ  
Resistance ratio  
R1 / R2  
2.14  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2012  
Ver. AED  
1
12

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