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DP8409AN-3 PDF预览

DP8409AN-3

更新时间: 2024-01-23 22:41:05
品牌 Logo 应用领域
其他 - ETC 外围集成电路光电二极管动态存储器控制器
页数 文件大小 规格书
24页 465K
描述
DRAM Controller

DP8409AN-3 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:DIP, DIP48,.6Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
JESD-30 代码:R-PDIP-T48JESD-609代码:e0
端子数量:48最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP48,.6
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified子类别:Memory Controllers
最大压摆率:325 mA表面贴装:NO
技术:MOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

DP8409AN-3 数据手册

 浏览型号DP8409AN-3的Datasheet PDF文件第2页浏览型号DP8409AN-3的Datasheet PDF文件第3页浏览型号DP8409AN-3的Datasheet PDF文件第4页浏览型号DP8409AN-3的Datasheet PDF文件第5页浏览型号DP8409AN-3的Datasheet PDF文件第6页浏览型号DP8409AN-3的Datasheet PDF文件第7页 
May 1989  
DP8409A Multi-Mode Dynamic RAM Controller/Driver  
General Description  
Operational Features  
Y
All DRAM drive functions on one chipÐminimizes skew  
on outputs, maximizes AC peformance  
On-chip capacitive-load drives (specified to drive up to  
88 DRAMs)  
Dynamic memory system designs, which formerly required  
several support chips to drive the memory array, can now  
be implemented with a single IC . . . the DP8409A Multi-  
Mode Dynamic RAM Controller/Driver. The DP8409A is ca-  
pable of driving all 16k and 64k Dynamic RAMs (DRAMs) as  
well as 256k DRAMs. Since the DP8409A is a one-chip so-  
lution (including capacitive-load drivers), it minimizes propa-  
gation delay skews, the major performance disadvantage of  
multiple-chip memory drive and control.  
Y
Y
Y
Y
Y
Drives directly all 16k, 64k, and 256k DRAMs  
Capable of addressing 64k, 256k, or 1M words  
Propagation delays of 25 ns typical at 500 pF load  
CAS goes low automatically after column addresses are  
valid if desired  
The DP8409A’s 8 modes of operation offer a wide selection  
of DRAM control capabilities. Memory access may be con-  
trolled externally or on-chip automatically; an on-chip re-  
fresh counter makes refreshing (either externally or auto-  
matically controlled) less complicated; and automatic mem-  
ory initialization is both simple and fast.  
Y
Y
Y
Y
Auto Access mode provides RAS, row to column se-  
lect, then CAS automatically and fast  
WE follows WIN unconditionallyÐoffering READ,  
WRITE or READ-MODIFY-WRITE cycles  
On-chip 9-bit refresh counter with selectable End-of-  
Count (127, 255 or 511)  
The DP8409A is a 48-pin DRAM Controller/Driver with 9  
multiplexed address outputs and 6 control signals. It con-  
sists of two 9-bit address latches, a 9-bit refresh counter,  
and control logic. All output drivers are capable of driving  
500 pF loads with propagation delays of 25 ns. The  
DP8409A timing parameters are specified driving the typical  
load capacitance of 88 DRAMs, including trace capaci-  
tance.  
End-of-Count indicated by RF I/O pin going low at 127,  
255 or 511  
Y
Y
Y
Low input on RF I/O resets 9-bit refresh counter  
CAS inhibited during refresh cycle  
Fall-through latches on address inputs controlled by  
ADS  
Y
Y
Y
TRI-STATE outputs allow multi-controller addressing of  
memory  
The DP8409A has 3 mode-control pins: M2, M1, and M0,  
where M2 is in general REFRESH. These 3 pins select 8  
modes of operation. Inputs B1 and B0 in the memory ac-  
e
Control output signals go high-impedance logic ‘‘1’’  
when disabled for memory sharing  
Power-up: counter reset, control signals high, address  
outputs TRI-STATE, and End-of-Count set to 127  
cess modes (M2  
1), are select inputs which select one of  
four RAS outputs. During normal access, the 9 address out-  
puts can be selected from the Row Address Latch or the  
Column Address Latch. During refresh, the 9-bit on-chip re-  
fresh counter is enabled onto the address bus and in this  
mode all RAS outputs are selected, while CAS is inhibited.  
Mode Features  
Y
8 modes of operation: 3 access, 3 refresh, and 2  
set-up  
Y
The DP8409A can drive up to 4 banks of DRAMs, with each  
bank comprised of 16k’s, 64k’s, or 256k’s. Control signal  
outputs RAS, CAS, and WE are provided with the same  
drive capability. Each RAS output drives one bank of  
DRAMs so that the four RAS outputs are used to select the  
banks, while CAS, WE, and the multiplexed addresses can  
be connected to all of the banks of DRAMs. This leaves the  
non-selected banks in the standby mode (less than one  
tenth of the operating power) with the data outputs in TRI-  
2 externally controlled modes: 1 access and 1 refresh  
(Modes 0, 4)  
Y
2 auto-access modes RAS  
e
x
R/C  
20 or 30 ns minimum (Modes 5, 6)  
x
CAS automatic,  
with t  
RAH  
Y
Y
Auto-access mode allows Hidden Refreshing (Mode 5)  
Forced Refresh requested on RF I/O if no Hidden Re-  
fresh (Mode 5)  
Y
Y
Y
Y
Y
Forced Refresh performed after system acknowledge of  
request (Mode 1)  
STATE . Only the bank with its associated RAS low will be  
É
written to or read from.  
Automatic Burst Refresh mode stops at End-of-Count  
of 127, 255, or 511 (Mode 2)  
2 All-RAS Acces modes externally or automatically con-  
trolled for memory initialization (Modes 3a, 3b)  
Automatic All-RAS mode with external 8-bit counter  
frees system for other set-up routines (Mode 3a)  
End-of-Count value of Refresh Counter set by B1 and  
B0 (Mode 7)  
TL/F/8409–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corp.  
PALÉ is a registered trademark of and used under license with Monolithic Memories Inc.  
C
1995 National Semiconductor Corporation  
TL/F/8409  
RRD-B30M105/Printed in U. S. A.  

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