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DP8417N-80 PDF预览

DP8417N-80

更新时间： 2024-02-14 14:51:15
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动器微控制器和处理器内存控制器外围集成电路光电二极管动态存储器时钟
页数 文件大小 规格书
28页 525K
描述
64k, 256k Dynamic RAM Controller/Drivers

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DP8417N-80 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DIP, DIP48,.6Reach Compliance Code：unknown
风险等级：5.87Is Samacsys：N
地址总线宽度：18边界扫描：NO
最大时钟频率：80 MHz外部数据总线宽度：
JESD-30 代码：R-PDIP-T48JESD-609代码：e0
长度：61.38 mm低功率模式：NO
内存组织：256K X 1区块数量：4
端子数量：48最高工作温度：70 °C
最低工作温度：封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP48,.6
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
认证状态：Not Qualified座面最大高度：5.08 mm
子类别：Memory Controllers最大压摆率：240 mA
最大供电电压：5.5 V最小供电电压：4.5 V
标称供电电压：5 V表面贴装：NO
技术：BIPOLAR温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：15.24 mm
uPs/uCs/外围集成电路类型：MEMORY CONTROLLER, DRAMBase Number Matches：1

DP8417N-80 数据手册

 浏览型号DP8417N-80的Datasheet PDF文件第2页浏览型号DP8417N-80的Datasheet PDF文件第3页浏览型号DP8417N-80的Datasheet PDF文件第4页浏览型号DP8417N-80的Datasheet PDF文件第5页浏览型号DP8417N-80的Datasheet PDF文件第6页浏览型号DP8417N-80的Datasheet PDF文件第7页 
PRELIMINARY  
August 1989  
DP8417/NS32817, 8418/32818, 8419/32819, 8419X/  
32819X 64k, 256k Dynamic RAM Controller/Drivers  
General Description  
Operational Features  
Y
Makes DRAM Interface and refresh tasks appear virtu-  
ally transparent to the CPU, making DRAMs as easy to  
use as static RAMs  
The DP8417/8418/8419/8419X represent a family of 256k  
DRAM Controller/Drivers which are designed to provide  
‘‘No-Waitstate’’ CPU interface to Dynamic RAM arrays of up  
to 2 Mbytes and larger. Each device offers slight functional  
variations of the DP8419 design which are tailored for differ-  
ent system requirements. All family members are fabricated  
using National’s new oxide isolated Advanced Low power  
Schottky (ALS) process and use design techniques which  
enable them to significantly out-perform all other LSI or dis-  
crete alternatives in speed, level of integration, and power  
consumption.  
Y
Specifically designed to eliminate CPU wait states up to  
10 MHz or beyond  
Y
Eliminates 15 to 20 SSI/MSI components for significant  
board real estate reduction, system power savings and  
the elimination of chip-to-chip AC skewing  
Y
On-board ultra precise delay line  
Y
On-board high capacitive RAS, CAS, WE, and address  
drivers (specified driving 88 DRAMs directly)  
Each device integrates the following critical 256k DRAM  
controller functions on a single monolithic device: ultra pre-  
cise delay line; 9-bit refresh counter; fall-through row, col-  
umn, and bank select input latches; Row/Column address  
muxing logic; on-board high capacitive-load RAS, CAS, and  
Write Enable & Address output drivers; and, precise control  
signal timing for all the above.  
Y
AC specified for directly addressing up to 8 Megabytes  
Y
Low power/high speed bipolar oxide isolated process  
Y
Upward pin and function compatible with new DP8428/  
DP8429 1 Mbit DRAM controller drivers  
Y
Downward pin and function compatible with DP8408A/  
DP8409A 64k/256k DRAM controller/drivers  
Y
4 user selectable modes of operation for Access and  
Refresh (2 automatic, 2 external)  
There are four device options of the basic DP8419 Control-  
ler. The DP8417 is pin and function compatible with the  
DP8419 except that its outputs are TRI-STATE  
. The  
É
Contents  
Y
DP8418 changes one pin and is specifically designed to  
offer an optimum interface to 32 bit microprocessors. The  
DP8419X is functionally identical to the DP8419, but is avail-  
able in a 52-pin DIP package which is upward pin compati-  
ble with National’s new DP8429D 1 Mbit DRAM Controller/  
Driver.  
System and Device Block Diagrams  
Y
Recommended Companion Components  
Y
Device Connection Diagrams and Pin Definitions  
Y
Family Device Differences  
(DP8419 vs DP8409A, 8417, 8418, 8419X)  
Y
Each device is available in plastic DIP, Ceramic DIP, and  
Plastic Chip Carrier (PCC) packaging. (Continued)  
Mode of Operation  
(Descriptions and Timing Diagrams)  
Y
Application Description and Diagrams  
TRI-STATEÉ is a registered trademark of National Semiconductor Corp.  
PALÉ is a registered trademark of and used under license with Monolithic Memories, Inc.  
Y
DC/AC Electrical Specifications, Timing Diagrams and  
Test Conditions  
System Diagram  
TL/F/8396–25  
C
1995 National Semiconductor Corporation  
TL/F/8396  
RRD-B30M105/Printed in U. S. A.  
1234567...28

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