Datasheet > DN1509N8-G

DN1509N8-G

更新时间： 2024-09-28 02:55:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
12页	394K
描述
N-Channel, Depletion-Mode, Vertical DMOS FET

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DN1509N8-G 数据手册

DN1509

N-Channel, Depletion-Mode, Vertical DMOS FET

Features

Description

• High-input impedance

This low threshold, depletion-mode, normally-on, tran-

sistor utilizes an advanced vertical Diffusion Metal

Oxide Semiconductor (DMOS) structure and a well

proven silicon-gate manufacturing process. This com-

bination produces a device with the power-handling

capabilities of bipolar transistors, plus the high-input

impedance and positive-temperature coefficient inher-

ent in Metal-Oxide Semiconductor (MOS) devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced second-

ary breakdown.

• Low-input capacitance

• Fast switching speeds

• Low on-resistance

• Free from secondary breakdown

• Low input and output leakages

Applications

• Normally-on switches

• Battery operated systems

• Converters

Vertical DMOS Field-Effect Transistors (FETs) are ide-

ally suited to a wide range of switching and amplifying

applications where a very low threshold voltage, high

breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

• Linear amplifiers

• Constant current sources

• Telecom

 2015 Microchip Technology Inc.

DS20005403B-page 1

12 3 4 5 6 7...12

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