Datasheet > DN200

DN200

更新时间： 2024-01-20 15:54:00

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	176K
描述
Extremely low collector-to-emitter saturation voltage

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中文翻译

获取价格

技术参数
数据手册

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DN200 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	2 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1.1 W
子类别：	Other Transistors	表面贴装：	YES

DN200 数据手册

DN200

NPN Silicon Transistor

Features

• Extremely low collector-to-emitter

saturation voltage

PIN Connection

( V_CE(SAT)= 0.2V Typ. @I_C/I_B=1A/50mA)

• Suitable for low voltage large current drivers

• Complementary pair with DP200

• Switching Application

TO-92

Ordering Information

Type NO.

Marking

Package Code

DN200

TO-92

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

Collector dissipation

Junction temperature

Storage temperature

P_C

625

150

-55~150

°C

T_j

T_stg

Electrical Characteristics

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

(Ta=25°C)

Min. Typ. Max. Unit

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_E=50μA, I_C=0

V_CB=12V, I_E=0

0.1

450

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE1

V_CE=1V, I_C=100mA

V_CE=1V, I_C=2A

200

DC current gain

h_FE2

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=1A, I_B=50mA

V_CE=5V, I_C=50mA

V_CB=10V, I_E=0, f=1MHz

0.3

1.2

260

MHz

Collector output capacitance

C_ob

KSD-T0A038-000

12 3 4

中文翻译

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