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DN1509N8-G PDF预览

DN1509N8-G

更新时间: 2024-09-27 03:15:11
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
3页 364K
描述
N-Channel Depletion-Mode Vertical DMOS FET

DN1509N8-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.90.00.00风险等级:8.53
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:90 V最大漏极电流 (ID):0.36 A
最大漏源导通电阻:6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.6 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DN1509N8-G 数据手册

 浏览型号DN1509N8-G的Datasheet PDF文件第2页浏览型号DN1509N8-G的Datasheet PDF文件第3页 
DN1509  
N-Channel Depletion-Mode Vertical DMOS FET  
Features  
General Description  
High input impedance  
The Supertex DN1509 is suitable for high voltage transient  
protection for LDO in automobile applications during “load  
dump” conditions.  
Low input capacitance  
Fast switching speeds  
Low ON-resistance  
This low threshold, depletion-mode (normally-on)  
transistor utilizes an advanced vertical DMOS structure  
and Supertex’s well-proven silicon-gate manufacturing  
process. This combination produces a device with the  
power handling capabilities of bipolar transistors and  
with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all  
MOS structures, this device is free from thermal runaway  
and thermally-induced secondary breakdown.  
Free from secondary breakdown  
Low input and output leakages  
Applications  
Normally-on switches  
Battery operated systems  
Converters  
Linear amplifiers  
Constant current sources  
Telecom  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
Ordering Information  
Product marking for TO-243AA:  
Package Option  
Device  
BVDSX/BVDGX RDS(ON) (max)  
90V 6.0Ω  
IDSS (typ)  
DN5A  
TO-243AA (SOT-89)  
where = 2-week alpha date code  
DN1509  
DN1509N8-G  
540mA  
-G indicates package is RoHS compliant (‘Green’)  
Pin Configuration  
Absolute Maximum Ratings  
Parameter  
D
Value  
BVDSX  
BVDGX  
±±0V  
Drain to source voltage  
Drain to gate voltage  
Gate to source voltage  
Operating and storage temperature  
Soldering temperature1  
-55°C to +150°C  
+300°C  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
G
D
S
TO-243AA (SOT-89)  
(Top View)  
Note 1. Distance of 1.6mm from case for 10 seconds.  

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