Datasheet > DMTH4014SPSW

DMTH4014SPSW

更新时间： 2023-12-06 20:11:15

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描述
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH4014SPSW 数据手册

DMTH4014SPSW

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

43.5

30.8

43.5

170

19.7

19.4

V_GSS

T_C= +25°C

Continuous Drain Current (Note 6)

I_D

T_C= +100°C

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)

Avalanche Current, L=0.1mH

I_S

I_DM

I_AS

Avalanche Energy, L=0.1mH

E_AS

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 5)

Symbol

P_D

Value

Unit

T_A= +25°C

Steady State

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_θJA

46.9

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

3.2

°C/W

°C

R_θJC

-55 to +175

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 1mA

V_DS= 32V, V_GS= 0V

μA

±100

I_GSS

V_GS= ±20V, V_DS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

—

11.4

0.9

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 20A

V_GS= 0V, I_S= 20A

Static Drain-Source On-Resistance

Diode Forward Voltage

—

14.8

1.2

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

805

208

—

C_iss

C_oss

C_rss

R_g

V_DS= 20V, V_GS= 0V,

f = 1MHz

Output Capacitance

Ω

Reverse Transfer Capacitance

Gate Resistance

1.2

10.6

2.2

2.7

4.1

3.8

8.6

1.9

10.2

9.6

V_DS= 0V, V_GS= 0V, f = 1MHz

V_DD= 20V, I_D= 20A, V_GS= 10V

Total Gate Charge

Q_g

Gate-Source Charge

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_GS= 20V, V_DS= 10V,

R_g= 1.6Ω, I_D= 20A

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Body Diode Reverse Recovery Time

t_RR

I_F= 15A, di/dt = 400A/μs

Body Diode Reverse Recovery Charge

Q_RR

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

January 2021

DMTH4014SPSW

Document number: DS42889 Rev. 2 - 2

123 4 5 6 7

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