Datasheet > DMTH10H4M5LPSW

DMTH10H4M5LPSW

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	741K
描述
100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMTH10H4M5LPSW 数据手册

DMTH10H4M5LPSW

30.0

25.0

20.0

15.0

10.0

5.0

V_GS= 3.0V

V_GS= 10.0V

V_GS= 8.0V

V_DS= 5V

T_J= 175℃

V_GS= 5.0V

V_GS= 4.5V

T_J= 150℃

T_J= 125℃

T_J= 85℃

T_J= 25℃

V_GS= 2.8V

V_GS= 2.5V

2.5

T_J= -55℃

0.0

0.5

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

0.005

0.0048

0.0046

0.0044

0.0042

0.004

0.04

0.03

0.02

0.01

V_GS= 4.5V

0.0038

0.0036

0.0034

0.0032

0.003

I_D= 20A

I_D= 30A

V_GS= 10V

10 12 14 16 18 20

V_GS, GATE-SOURCE VOLTAGE (V)

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

Figure 4. Typical Transfer Characteristic

2.4

2.2

0.01

0.008

0.006

0.004

0.002

V_GS= 10V

V_GS= 10V, I_D= 30A

T_J= 175℃

T_J= 125℃

T_J= 150℃

1.8

1.6

1.4

1.2

T_J= 85℃

T_J= 25℃

V_GS= 4.5V, I_D= 20A

T_J= -55℃

0.8

0.6

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

I_D, DRAIN CURRENT (A)

Figure 6. On-Resistance Variation with Junction Temperature

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

3 of 7

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August 2022

DMTH10H4M5LPSW

Document number: DS43935 Rev. 1 - 2

1 234 5 6 7

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