Datasheet > DMTH10H025LK3

DMTH10H025LK3

更新时间： 2023-12-06 20:11:48

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美台 - DIODES		/
页数	文件大小	规格书
7页	439K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH10H025LK3 数据手册

DMTH10H025LK3

0.06

0.055

0.05

2.8

2.6

2.4

2.2

I_D= 1mA

0.045

0.04

V_GS= 6.0V, I_D= 20A

0.035

0.03

I_D= 250μA

1.8

1.6

1.4

1.2

0.025

0.02

V_GS= 10V, I_D= 20A

0.015

0.01

-50 -25

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

75 100 125 150 175

-50 -25

75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

1000

100

f = 1MHz

V_GS= 0V

C_iss

C_oss

T_J= 175^oC

T_J= 150^oC

T_J= 125^oC

C_rss

T_J= 85^oC

T_J= 25^oC

T_J= -55^oC

10 20 30 40 50 60 70 80 90 100

V_DS, DRAIN-SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

1000

100

P_W= 1µs

R_DS(ON)

Limited

P_W= 10µs

P_W= 100µs

P_W= 1ms

T_J(Max)= 175℃

T_C= 25℃

V_DS= 50V, I_D= 20A

P_W= 10ms

Single Pulse

DUT on Infinite

Heatsink

0.1

0.01

P_W= 100ms

V_GS= 10V

10 12 14 16 18 20 22

Q_g(nC)

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

4 of 7

www.diodes.com

July 2018

DMTH10H025LK3

Document number: DS40038 Rev. 4 - 2

1 2 345 6 7

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