Datasheet > DMT10H025LK3

DMT10H025LK3

更新时间： 2023-12-06 20:11:23

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美台 - DIODES		/
页数	文件大小	规格书
7页	484K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMT10H025LK3 数据手册

DMT10H025LK3

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

100

±20

Gate-Source Voltage

V_GSS

T_C= +25°C

T_C= +70°C

47.2

37.7

Continuous Drain Current, V_GS= 10V

I_D

185

2.6

Pulsed Drain Current (10µs Pulse, T_C= +25°C, Package Limited)

I_DM

I_SM

I_S

Pulsed Body Diode Forward Current (10µs Pulse, T_C= +25°C, Package Limited)

Maximum Continuous Body Diode Forward Current (Note 6)

Avalanche Current, L = 0.1mH

15.8

12.5

I_AS

E_AS

Avalanche Energy, L = 0.1mH

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

Value

Unit

Total Power Dissipation (Note 5)

2.6

Steady State

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_θJA

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

1.5

°C/W

°C

R_θJC

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

100

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 1mA

V_DS= 80V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

µA

—

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

—

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 20A

V_GS= 6V, I_D= 20A

V_GS= 4.5V, I_D= 20A

V_GS= 0V, I_S= 20A

—

17.1

21.4

28.3

—

Static Drain-Source On-Resistance

43.7

1.3

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

1477

263

—

C_iss

C_oss

C_rss

R_G

V_DS= 50V, V_GS= 0V

f = 1MHz

Output Capacitance

Ω

Reverse Transfer Capacitance

Gate Resistance

1.3

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge

5.7

Q_G

V_DD= 50V, I_D= 20A,

V_GS= 10V

Gate-Source Charge

Gate-Drain Charge

nC

Q_GS

Q_GD

t_D(ON)

t_R

3.8

6.3

Turn-On Delay Time

Turn-On Rise Time

9.4

16.7

8.2

38.7

53.7

V_DD= 50V, V_GS= 10V,

I_D= 20A, R_G= 6Ω

Turn-Off Delay Time

Turn-Off Fall Time

t_D(OFF)

t_F

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_F= 20A, di/dt = 100A/µs

Q_RR

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

July 2018

DMT10H025LK3

Document number: DS40039 Rev. 3 - 2

123 4 5 6 7

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