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DMS3016SSSA PDF预览

DMS3016SSSA

更新时间: 2022-02-26 13:21:21
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 163K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

DMS3016SSSA 数据手册

 浏览型号DMS3016SSSA的Datasheet PDF文件第1页浏览型号DMS3016SSSA的Datasheet PDF文件第2页浏览型号DMS3016SSSA的Datasheet PDF文件第4页浏览型号DMS3016SSSA的Datasheet PDF文件第5页浏览型号DMS3016SSSA的Datasheet PDF文件第6页 
DMS3016SSSA  
30  
25  
30  
25  
V
= 4.5V  
GS  
V
= 4.0V  
V
= 5V  
GS  
DS  
V
= 3.5V  
GS  
20  
15  
10  
5
20  
15  
10  
V
= 3.0V  
GS  
V
= 2.5V  
GS  
V
= 150°C  
GS  
V
= 125°C  
= 85°C  
GS  
V
GS  
5
0
V
V
= 25°C  
GS  
V
= 2.2V  
V
= 2.0V  
GS  
GS  
= -55°C  
GS  
0
0
0.5  
1
1.5  
2
0
0.5  
1
1.5  
2
2.5  
3
VDS, DRAIN-SOURCE VOLTAGE (V)  
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristic  
Fig. 1 Typical Output Characteristic  
0.05  
0.04  
0.04  
0.03  
V
= 4.5V  
GS  
V
= 2.5V  
0.03  
0.02  
GS  
T
= 150°C  
A
0.02  
T
= 125°C  
= 85°C  
A
T
A
V
= 4.5V  
GS  
T
= 25°C  
A
0.01  
0
0.01  
0
T
= -55°C  
A
V
= 10V  
GS  
0
5
10  
15  
20  
25  
30  
0
5
10  
ID, DRAIN CURRENT (A)  
Fig. 4 Typical On-Resistance  
15  
20  
25  
30  
ID, DRAIN-SOURCE CURRENT (A)  
Fig. 3 Typical On-Resistance  
vs. Drain Current and Gate Voltage  
vs. Drain Current and Temperature  
0.03  
0.02  
1.6  
1.4  
1.2  
V
= 4.5V  
GS  
I
= 10A  
D
V
= 10V  
GS  
I
= 20A  
D
V
= 4.5V  
GS  
I
= 10A  
D
1.0  
0.01  
V
= 10V  
GS  
I
= 20A  
D
0.8  
0.6  
0
-50 -25  
-50 -25  
0
25  
50  
75 100 125 150  
0
25  
50  
75 100 125 150  
TA, AMBIENT TEMPERATURE (°C)  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 6 On-Resistance Variation with Temperature  
Fig. 5 On-Resistance Variation with Temperature  
3 of 6  
www.diodes.com  
October 2010  
© Diodes Incorporated  
DMS3016SSSA  
Document number: DS35073 Rev. 1 - 2  

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