DMP4026SFGQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Unit
-40
20
-28
-22
-28
-113
-113
-20
65
V
Gate-Source Voltage
VGSS
TC = +25°C
TC = +70°C
Continuous Drain Current (Note 6), VGS = -10V
ID
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
IS
IDM
ISM
IAS
EAS
A
Avalanche Energy, L = 0.3mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
2.6
Unit
W
Total Power Dissipation (Note 5)
TA = +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
48
33
°C/W
W
RθJA
TC = +25°C
PD
Steady State
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
3.8
°C/W
°C
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
BVDSS
IDSS
-1.0
ID = -250µA, VGS = 0V
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.8
-1.8
25
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
15
ID = -250μA, VDS = VGS
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
IS = -1A, VGS = 0V
Static Drain-Source On-Resistance
18
45
Diode Forward Voltage
-0.7
-1.0
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
2275
215
197
2.3
48
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
25
Qg
nC
ns
VDS = -20V, ID = -3A
4
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
8
Turn-On Delay Time
4.5
5.6
75
Turn-On Rise Time
VDD = -20V, VGS = -10V
ID = -3A, RG = 6Ω
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18.5
9.5
ns
tRR
IS = -3A, di/dt = 100A/μs
nC
QRR
IS = -3A, di/dt = 100A/µs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
www.diodes.com
April 2023
DMP4026SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS44883 Rev. 2 - 2
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