Datasheet > DMP3165SVTQ

DMP3165SVTQ

更新时间： 2023-12-06 20:10:47

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美台 - DIODES		/
页数	文件大小	规格书
8页	611K
描述
Dual P-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

数据手册

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DMP3165SVTQ 数据手册

DMP3165SVTQ

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-30

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

-1.0

±100

µA

V_DS= -24V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

—

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

-1.5

-2.2

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250μA

V_GS= -10V, I_D= -2.7A

V_GS= -4.5V, I_D= -2A

V_GS= 0V, I_S= -1A

—

140

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

-0.8

-1.0

—

287

—

C_iss

C_oss

C_rss

R_g

V_DS= -15V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

8.3

3.5

6.8

0.4

1.1

7.4

17.9

19.6

21.8

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= -4.5V)

Total Gate Charge (V_GS= -10V)

Gate-Source Charge

Q_g

V_DS= -15V, V_GS= -4.5V, I_D= -3A

Q_g

Q_gs

Q_gd

t_D(ON)

t_R

V_DS= -15V, V_GS= -10V, I_D= -3A

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_GS= -10V, V_DS= -15V

R_g= 6Ω, R_L= 15Ω

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

3 of 8

www.diodes.com

May 2023

DMP3165SVTQ

Document number: DS43994 Rev. 3 - 2

1 234 5 6 7 8

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