DMP3021SPDW
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
μA
μA
—
±10
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
—
—
-2.5
18
V
mΩ
V
VGS(th)
RDS(on)
VSD
VDS = VGS, ID = -250μA
VGS = -10V, ID = -8A
VGS = -5V, ID = -5A
VGS = 0V, IS = -1A
9.8
Static Drain-Source On-Resistance
—
14.3
-0.7
28
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1799
259
225
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, ID = -10A
17.4
34
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
Qg
5.1
Qgs
Qgd
tD(on)
tR
Gate-Drain Charge
8.4
Turn-On Delay Time
6.5
Turn-On Rise Time
18.3
35.8
23.7
14.9
15
VDD = -15V, VGS = -10V,
RG = 3Ω, ID = -10A
Turn-Off Delay Time
tD(off)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
tRR
IS = -8A, dI/dt = 500A/μs
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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April 2022
© Diodes Incorporated
DMP3021SPDW
Document number: DS43466 Rev. 3 - 2