Datasheet > DMP3020LSS

DMP3020LSS

更新时间： 2022-10-27 10:42:28

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描述
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3020LSS 数据手册

DMP3020LSS

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Min

Typ

Max

Unit

Test Condition

-30

⎯

BV_DSS

I_DSS

⎯

-1

V_GS= 0V, I_D= -250μA

V_DS= -30V, V_GS= 0V

μA

±100

±800

_GS= ±20V, V_DS= 0V

_GS= ±25V, V_DS= 0V

Gate-Source Leakage

I_GSS

⎯

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-1

-2

V_GS(th)

⎯

11.6

18.6

V_DS= V_GS, I_D= -250μA

V_GS= -10V, I_D= -8A

V_GS= -4.5V, I_D= -5A

V_DS= -10V, I_D= -12A

V_GS= 0V, I_S= -2A

⎯

Static Drain-Source On-Resistance

R_{DS (ON)}

mΩ

Forward Transconductance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

g_fs

⎯

-0.5

⎯

-1.1

V_SD

⎯

1802

415

295

2.3

C_iss

C_oss

C_rss

R_G

⎯

Output Capacitance

_DS= -15V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0V, V_DS= 0V, f = MHz

SWITCHING CHARACTERISTICS

_DS= -15V, V_GS= -4.5V, I_D= -8A

_DS= -15V, V_GS= -10V, I_D= -8A

15.3

30.7

Total Gate Charge

Q_g

⎯

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

3.5

7.9

5.1

Q_gs

Q_gd

t_d(on)

t_r

⎯

V_DS= -15V, V_GS= -10V, I_D= -8A

_GS= -10V, V_DS= -15V,

_D= 15Ω, R_G= 6Ω

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

Notes:

5. Short duration pulse test used to minimize self-heating effect.

= -10V

= -3.0V

= -4.0V

= -2.5V

= 150°C

= 125°C

= 85°C

= 25°C

= -55°C

= -2.0V

= -1.5V

1.5

2.5

3.5

-V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristic

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristic

2 of 5

www.diodes.com

October 2008

DMP3020LSS

Document number: DS31263 Rev. 8 - 2

123 4 5

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