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DMP3018SFV PDF预览

DMP3018SFV

更新时间: 2022-02-26 11:59:02
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美台 - DIODES /
页数 文件大小 规格书
7页 464K
描述
30V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP3018SFV 数据手册

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DMP3018SFV  
3
2.8  
2.6  
2.4  
2.2  
2
0.03  
0.028  
0.026  
0.024  
0.022  
0.02  
0.018  
0.016  
0.014  
0.012  
0.01  
0.008  
0.006  
0.004  
0.002  
0
VGS = -4.5V, ID = -8.5A  
ID = -1mA  
ID = -250μA  
1.8  
1.6  
1.4  
1.2  
1
VGS = -10V, ID = -11.5A  
-50  
-25  
0
25  
50  
75  
100 125 150  
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ, JUNCTION TEMPERATURE ()  
Figure 8. Gate Threshold Variation vs. Junction  
Temperature  
TJ, JUNCTION TEMPERATURE ()  
Figure 7. On-Resistance Variation with Junction  
Temperature  
30  
25  
20  
15  
10  
5
10000  
f=1MHz  
VGS = 0V  
Ciss  
1000  
Coss  
TJ = 85℃  
TJ = 125℃  
TJ = 25℃  
Crss  
TJ = 150℃  
TJ = -55℃  
0
100  
0
0.3  
0.6  
0.9  
1.2  
1.5  
0
5
10  
15  
20  
25  
30  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Figure 9. Diode Forward Voltage vs. Current  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 10. Typical Junction Capacitance  
10  
8
100  
10  
PW =100µs  
RDS(ON) Limited  
6
PW =1ms  
PW =10ms  
TJ(Max) = 150℃  
1
4
VDS = -15V, ID = -11.5A  
PW =100ms  
PW =1s  
PW =10s  
TC = 25℃  
0.1  
0.01  
Single Pulse  
DUT on 1*MRP  
Board  
2
DC  
10  
VGS= -10V  
0
0
10  
20  
30  
40  
50  
60  
0.01  
0.1  
1
100  
Qg (nC)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 12. SOA, Safe Operation Area  
Figure 11.Gate Charge  
4 of 7  
www.diodes.com  
January 2018  
© Diodes Incorporated  
DMP3018SFV  
Document number: DS40134 Rev. 3 - 2  

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