DMP3018SFK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
±25
VGSS
Steady
State
-10.2
-8.1
T
T
A = +25°C
A = +70°C
A
A
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
ID
ID
Steady
State
-7.7
-6.1
TA = +25°C
A = +70°C
T
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
-3
A
A
IS
-80
-14
104
IDM
IAS
EAS
A
Avalanche Energy (Note 7)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
Units
W
1
123
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
JA
JC
2.2
PD
Thermal Resistance, Junction to Ambient (Note 6)
55
°C/W
W
R
Total Power Dissipation (Note 6)
17
TC = +25°C
PD
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
7.2
°C/W
°C
R
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
-1
V
BVDSS
IDSS
—
—
—
—
VGS = 0V, ID = -10mA
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
µA
µA
V
V
DS = -24V, VGS = 0V
GS = ±25V, VDS = 0V
-100
±10
—
IGSS
—
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
—
-1.6
9.5
15
-3
V
VGS(th)
VDS = VGS, ID = -250μA
14.5
25.5
-1.2
—
V
V
GS = -10V, ID = -9.5A
GS = -4.5V, ID = -6.9A
Static Drain-Source On-Resistance
mΩ
RDS(ON)
—
Diode Forward Voltage
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.7
—
V
A
VSD
—
VGS = 0V, IS = -1A
ID(ON)
-20
VDS ≦-5V, VGS = -10V
2,207
390
343
8.4
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4,414
780
686
20
V
DS = -15V, VGS = 0V,
Output Capacitance
pF
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS = 0V, VGS = 0V, f = 1MHz
42.7
21.6
7.9
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
90
Qg
45
nC
ns
VDS = -15V, ID = -9.5A
Qgs
Qgd
tD(on)
tr
16
Gate-Drain Charge
10
20
15
Turn-On Delay Time
7.35
16.4
67.2
37.5
18.6
8.6
30
Turn-On Rise Time
V
DD = -15V, VGS = -10V,
110
60
Turn-Off Delay Time
RGEN = 6ꢀ, ID = -9.5A
tD(off)
tf
Turn-Off Fall Time
35
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
IS = -9.5A, di/dt = 100A/μs
17.5
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMP3018SFK
Document number: DS37604 Rev. 2 - 2