5秒后页面跳转
捷配首页

Datasheet > DMP3017SFK-7
DMP3017SFK-7 PDF预览

DMP3017SFK-7

更新时间： 2022-02-26 10:43:46
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 621K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

DMP3017SFK-7 数据手册

 浏览型号DMP3017SFK-7的Datasheet PDF文件第1页浏览型号DMP3017SFK-7的Datasheet PDF文件第3页浏览型号DMP3017SFK-7的Datasheet PDF文件第4页浏览型号DMP3017SFK-7的Datasheet PDF文件第5页浏览型号DMP3017SFK-7的Datasheet PDF文件第6页浏览型号DMP3017SFK-7的Datasheet PDF文件第7页 
DMP3017SFK  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
±25  
VGSS  
Steady  
State  
-10.4  
-8.3  
TA = +25°C  
TA = +70°C  
A
A
Continuous Drain Current (Note 6) VGS = -10V  
Continuous Drain Current (Note 6) VGS = -4.5V  
ID  
ID  
Steady  
State  
-7.8  
-6.2  
TA = +25°C  
TA = +70°C  
Maximum Continuous Body Diode Forward Current (Note 6)  
Pulsed Drain Current (10µs pulse, duty cycle = 1%)  
Avalanche Current (Note 7)  
-3  
A
A
IS  
-80  
-14  
104  
IDM  
IAS  
EAS  
A
Avalanche Energy (Note 7)  
mJ  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Total Power Dissipation (Note 5)  
Symbol  
Value  
Units  
W
1
123  
PD  
Thermal Resistance, Junction to Ambient (Note 5)  
Total Power Dissipation (Note 6)  
°C/W  
W
R  
JA  
2.2  
PD  
Thermal Resistance, Junction to Ambient (Note 6)  
55  
°C/W  
W
R  
JA  
Total Power Dissipation (Note 6)  
17  
TC = +25°C  
PD  
Thermal Resistance, Junction to Case (Note 6)  
Operating and Storage Temperature Range  
7.2  
°C/W  
°C  
R  
JC  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 8)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-30  
—
—
-1  
V
BVDSS  
IDSS  
—
—
—
—
VGS = 0V, ID = -10mA  
Zero Gate Voltage Drain Current TJ = +25°C  
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)  
Gate-Source Leakage  
µA  
µA  
VDS = -24V, VGS = 0V  
VGS = ±25V, VDS = 0V  
-100  
±10  
—
IGSS  
—
ON CHARACTERISTICS (Note 8)  
Gate Threshold Voltage  
-1  
—
-1.6  
9.5  
15  
-2.5  
14  
V
VGS(th)  
VDS = VGS, ID = -250μA  
VGS = -10V, ID = -9.5A  
VGS = -4.5V, ID = -6.9A  
VGS = 0V, IS = -1A  
Static Drain-Source On-Resistance  
mΩ  
RDS(ON)  
25  
—
Diode Forward Voltage  
-0.7  
—
-1.2  
—
V
A
VSD  
—
On State Drain Current (Note 9)  
DYNAMIC CHARACTERISTICS (Note 9)  
Input Capacitance  
ID(ON)  
-20  
VDS ≦-5V, VGS = -10V  
2207  
390  
343  
8.4  
Ciss  
Coss  
Crss  
Rg  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4414  
780  
686  
20  
VDS = -15V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
Gate Resistance  
Ω
VDS = 0V, VGS = 0V, f = 1MHz  
42.7  
21.6  
7.9  
Total Gate Charge (VGS = -10V)  
Total Gate Charge (VGS = -4.5V)  
Gate-Source Charge  
Qg  
90  
Qg  
45  
nC  
ns  
VDS = -15V, ID = -9.5A  
Qgs  
Qgd  
tD(on)  
tr  
16  
Gate-Drain Charge  
10  
20  
15  
Turn-On Delay Time  
7.35  
16.4  
67.2  
37.5  
18.6  
8.6  
30  
Turn-On Rise Time  
VDD = -15V, VGS = -10V,  
110  
60  
Turn-Off Delay Time  
RGEN = 6Ω, ID = -9.5A  
tD(off)  
tf  
Turn-Off Fall Time  
35  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
trr  
IS = -9.5A, di/dt = 100A/μs  
17.5  
nC  
Qrr  
Notes:  
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.  
7. UIS in production with L = 1mH, TJ = +25°C.  
8. Short duration pulse test used to minimize self-heating effect.  
9. Guaranteed by design. Not subject to production testing.  
2 of 7  
www.diodes.com  
May 2015  
© Diodes Incorporated  
DMP3017SFK  
Document number: DS37310 Rev. 4 - 2  
1234567

中文翻译

下载PDF

与DMP3017SFK-7相关器件

型号 品牌 获取价格 描述 数据表
DMP3017SFV DIODES

获取价格

 		30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3017SFV-13 DIODES

获取价格

 		30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3017SFV-7 DIODES

获取价格

 		30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFK DIODES

获取价格

 		P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFK_15 DIODES

获取价格

 		P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFK-13 DIODES

获取价格

 		P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFK-7 DIODES

获取价格

 		P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFV DIODES

获取价格

 		30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFV-13 DIODES

获取价格

 		30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3018SFV-7 DIODES

获取价格

 		30V P-CHANNEL ENHANCEMENT MODE MOSFET

与DMP3017SFK-7相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证