Datasheet > DMP22D5UFO

DMP22D5UFO

更新时间： 2023-12-06 20:11:32

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	425K
描述
20V P-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMP22D5UFO 数据手册

DMP22D5UFO

1.2

V_GS= -1.5V, I_D= -10mA

I_D= -1mA

V_GS= -1.8V, I_D= -20mA

0.8

0.6

0.4

0.2

I_D= -250μA

V_GS= -2.5V, I_D= -50mA

V_GS= -4.5V, I_D= -100mA

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

Figure 8. Gate Threshold Variation vs. Junction

Temperature

0.5

0.4

0.3

0.2

0.1

100

V_GS= 0V

f = 1MHz

C_iss

C_oss

T_J= 85℃

T_J= 150℃

C_rss

T_J= 25℃

T_J= 125℃

T_J= -55℃

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

4.5

P_W= 100µs

R_DS(ON)

Limited

P_W= 1ms

3.5

0.1

0.01

P_W= 10ms

P_W= 100ms

P_W= 1s

P_W= 10s

2.5

1.5

T_J(Max)= 150℃

T_C= 25℃

Single Pulse

DUT on

V_DS= -10V, I_D= -250mA

0.5

1*MRP Board

_GS= -4.5V

0.001

0.05

0.1

0.15

0.2

0.25

0.3

0.1

100

Q_g(nC)

Figure 11. Gate Charge

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

4 of 7

www.diodes.com

December 2020

DMP22D5UFO

Document number: DS41895 Rev. 5 - 2

1 2 345 6 7

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