Datasheet > DMN61D8LQ

DMN61D8LQ

更新时间： 2023-12-06 20:10:52

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美台 - DIODES		驱动
页数	文件大小	规格书
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描述
INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER

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DMN61D8LQ 数据手册

DMN61D8LQ

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS



V_GS= 0V, I_D= 10mA

V_DS= 60V, V_GS= 0V

V_DS= 12V, V_GS= 0V

0.5

Zero Gate Voltage Drain Current

Gate-Source Leakage

µA



V_GS= ±5V, V_DS= 0V

V_GS= ±3V, V_DS= 0V

±90

±60

µA

I_GSS



ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.3

2.0

V_GS(TH)

R_DS(ON)



V_DS= V_GS, I_D= 1mA

V_GS=5V, I_D= 0.15A

V_GS= 3V, I_D= 0.15A

V_DS=12V, I_D= 0.15A

V_GS= 0V, I_S= 0.15A

1.1

1.4

1.8

2.4

Static Drain-Source On-Resistance

Ω



Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

|Y_fs|

V_SD



1.2





12.9

C_iss

C_oss

C_rss

Q_g



V_DS= 12V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

0.84

0.74

0.19

0.16

131

301

582

440

V_GS= 5V, V_DS= 12V,

I_D=150mA

Gate-Source Charge

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_DD= 12V, V_GS= 5V.

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

= 10V

= 3.0V

= 5.0V

= 4.0V

= 4.5V

0.8

0.6

0.4

0.8

0.6

0.4

0.2

= 5.0V

= 2.5V

= 150°C

= 125°C

= 85°C

0.2

= 25°C

= 2.0V

= 1.8V

= -55°C

1.5

3.5

2.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

3 of 7

www.diodes.com

November 2016

DMN61D8LQ

Document number: DS37893 Rev. 2 - 2

1 234 5 6 7

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