Datasheet > DMN3731UFB4

DMN3731UFB4

更新时间： 2023-12-06 20:10:58

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	591K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMN3731UFB4 数据手册

DMN3731UFB4

0.6

0.5

0.4

0.3

0.2

0.1

1.5

1.2

0.9

0.6

0.3

V_GS= 1.8V, I_D= 75mA

V_GS= 2.5V, I_D= 100mA

I_D= 1mA

I_D= 250μA

V_GS= 4.5V, I_D= 200mA

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

Figure 7. On-Resistance Variation with Junction

Temperature

0.8

0.6

0.4

0.2

1000

100

f = 1MHz

V_GS= 0V

C_iss

C_oss

T_J= 85^oC

T_J= 150^oC

C_rss

T_J= 25^oC

T_J= 125^oC

T_J= -55^oC

0.3

0.6

0.9

1.2

V_SD, SOURCE-DRAIN VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

R_DS(ON)

Limited

P_W= 100µs

P_W= 1ms

P_W= 10ms

V_DS= 15V, I_D= 1A

0.1

T_J(Max)= 150℃

T_C= 25℃

Single Pulse

DUT on 1*MRP

Board

V_GS= 4.5V

P_W= 100ms

P_W= 1s

P_W= 10s

0.01

0.1

100

Q_g(nC)

Figure 11. Gate Charge

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

4 of 7

www.diodes.com

January 2019

DMN3731UFB4

Document number: DS40981 Rev. 2 - 2

1 2 345 6 7

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