Datasheet > DMN3010LFG

DMN3010LFG

更新时间： 2023-12-06 20:11:01

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	426K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMN3010LFG 数据手册

DMN3010LFG

2.5

= 1mA

1.5

= 25°C

= 250µA

0.5

0.3

0.6

0.9

1.2

1.5

-50 -25

75 100 125 150

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

T_A, AMBIENT TEMPERATURE (C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10000

f = 1MHz

iss

1000

= 15V

= 18A

oss

100

rss

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

Q_g, TOTAL GATE CHARGE (nC)

Figure 10 Gate Charge

100

DS(on)

Limited

= 100µs

= 10s

= 1s

= 100ms

T_J(max)= 150°C

T_A= 25°C

= 10ms

0.1

= 1ms

V_GS= 4.5V

Single Pulse

DUT on 1 * MRP Board

0.01

100

0.01

0.1

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

POWERDI is a registered trademark of Diodes Incorporated

4 of 7

www.diodes.com

June 2015

DMN3010LFG

Document number: DS36195 Rev. 7 - 2

1 2 345 6 7

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