Datasheet > DMN3008SCP10

DMN3008SCP10

更新时间： 2023-12-06 20:11:06

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	541K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMN3008SCP10 数据手册

DMN3008SCP10

30.0

25.0

20.0

15.0

10.0

5.0

V_DS= 5V

V_GS=4.0V

V_GS= 4.5V

V_GS= 10.0V

V_GS= 3.0V

V_GS= 2.8V

T_J=125℃

T_J=150℃

T_J=85℃

T_J=25℃

V_GS= 2.6V

V_GS= 2.4V

T_J=-55℃

0.0

0.5

1.5

2.5

1.4

1.8

2.2

2.6

3.4

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

0.2

0.18

0.16

0.14

0.12

0.1

0.01

0.009

0.008

0.007

0.006

0.005

0.004

V_GS= 4.5V

0.08

0.06

0.04

0.02

V_GS= 10V

I_D= 7.0A

I_D, DRAIN-SOURCE CURRENT (A)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

0.012

0.011

0.01

1.8

1.6

1.4

1.2

V_GS= 10V

T_J=150℃

0.009

0.008

0.007

0.006

0.005

0.004

0.003

0.002

V_GS= 4.5V, I_D=7A

T_J=125℃

T_J=85℃

V_GS= 10V, I_D=7A

T_J=25℃

T_J=-55℃

0.8

0.6

-50

-25

100 125 150

T_J, JUNCTION TEMPERATURE (℃)

I_D, DRAIN CURRENT (A)

Figure 6. On-Resistance Variation with Junction

Temperature

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

5 of 9

www.diodes.com

March 2017

DMN3008SCP10

Document number: DS39198 Rev. 2 - 2

1 2 3 456 7 8 9

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