是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 15 weeks | 风险等级: | 1.7 |
Samacsys Description: | Diodes Inc DMG6601LVT-7 Dual N/P-channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26 | 其他特性: | HIGH RELIABILITY |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 3.8 A | 最大漏源导通电阻: | 0.055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMG6602SVT | DIODES |
获取价格 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
DMG6602SVT-7 | DIODES |
获取价格 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
DMG6602SVTQ-13 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor | |
DMG6602SVTQ-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, | |
DMG6898LSD | DIODES |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG6898LSD-13 | DIODES |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG6968U | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG6968U | TYSEMI |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | |
DMG6968U-7 | TYSEMI |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | |
DMG6968U-7 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET |