Datasheet > DMG6968UDM

DMG6968UDM

更新时间： 2024-09-24 09:54:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	139K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMG6968UDM 数据手册

DMG6968UDM

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low Gate Charge

Low R_DS(ON)

•

Case: SOT-26

Case Material - Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.0008 grams (approximate)

•

24mΩ @V_GS= 4.5V

28mΩ @V_GS= 2.5V

34mΩ @V_GS= 1.8V

•

Low Input/Output Leakage

ESD Protected up to 2kV HBM

Lead Free By Design/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

"Green" Device (Note 4)

•

SOT-26

S₁

G₁

D₁/D₂

S₂

D₁/D₂

G₂

N-Channel

Equivalent Circuit

TOP VIEW

Pin Configuration

TOP VIEW

ESD PROTECTED TO 2kV

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

V_GSS

±12

Drain Current (Note 1) Continuous

T_A= 25°C

_A= 70°C

6.5

5.2

I_D

Pulsed Drain Current (Note 2)

I_DM

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

P_D

R_θ

Value

0.85

147

Unit

Thermal Resistance, Junction to Ambient (Note 1) t ≤10s

°C /W

°C

Operating and Storage Temperature Range

-55 to +150

T_J, T_STG

Notes:

1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 6

www.diodes.com

July 2009

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

12 3 4 5 6

中文翻译

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