DMEG 250
250 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55AW, STYLE 1
The DMEG 250 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
875 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
55 Volts
4.0 Volts
30 Amps
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
Power Out
Power Input
Power Gain
F = 960-1215 MHz
Vcc = 50 Volts
250
Watts
Watts
dB
Pout
Pin
Pg
60
6.2
PW = 10 sec
µ
Collector Efficiency
Load Mismatch Tolerance
35
%
η
DF = 5%
F = 1090 MHz
c
5:1
VSWR
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Ie = 20 mA
Ic = 25 mA
Vcb = 50 Volts
Ic = 1 mA, Vce = 5 V
4.0
55
Volts
Volts
BVebo
BVces
Cob
hFE
10
pF
oC/W
2
Thermal Resistance
0.2
θ
jc
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A, July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120