Datasheet > DMC2710UDW

DMC2710UDW

更新时间： 2023-12-06 20:11:11

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描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC2710UDW 数据手册

DMC2710UDW

Electrical Characteristics P-CHANNEL – Q2 (@ T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

—

-20

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250μA

V_DS= -20V, V_GS= 0V

V_GS= ±4.5V, V_DS= 0V

-100

±2.0

μA

Zero Gate Voltage Drain Current

Gate-Source Leakage

@T_C= +25°C

—

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

—

-1.0

0.75

1.05

1.5

V_GS(th)

R_DS(on)

V_SD

V_DS= V_GS, I_D= -250μA

V_GS= -4.5V, I_D= -430mA

V_GS= -2.5V, I_D= -300mA

V_GS= -1.8V, I_D= -150mA

V_GS= 0V, I_S= -150mA

0.48

0.6

Static Drain-Source On-Resistance

0.76

-0.7

—

Diode Forward Voltage (Note 7)

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-1.2

—

C_iss

C_oss

C_rss

Q_g

V_DS= -16V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

3.4

0.7

0.1

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

V_GS= -4.5V, V_DS= -10V,

I_D= -250mA

Q_gs

Q_gd

t_D(on)

t_R

Gate-Drain Charge

Turn-On Delay Time

V_DS= -10V, V_GS= -4.5V,

R_g= 10Ω, R_L= 47Ω

I_D= -200mA

Turn-On Rise Time

213

Turn-Off Delay Time

t_D(off)

t_F

Turn-Off Fall Time

10.5

1.8

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_F= 1A, di/dt = 100A/μs

Q_RR

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

3 of 10

www.diodes.com

May 2021

DMC2710UDW

Document number: DS41410 Rev. 5 - 2

1 234 5 6 7...10

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