Datasheet > DMC1028UVT

DMC1028UVT

更新时间： 2023-12-06 20:10:49

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描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC1028UVT 数据手册

DMC1028UVT

Electrical Characteristics – Q2 P-CHANNEL (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-20

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250μA

-1.0

±10

μA

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

V_DS= -20V, V_GS= 0V

V_GS= ±8V, V_DS= 0V

—

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.4

—

-1

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250μA

V_GS= -4.5V, I_D= -3.8A

V_GS= -2.5V, I_D= -3.3A

V_GS= -1.8V, I_D= -1.0A

V_GS= -1.5V, I_D= -0.5A

V_GS= 0V, I_S= -1A

—

100

140

210

-1.2

Static Drain-Source On-Resistance

—

110

-0.7

Diode Forward Voltage

—

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

576

—

Ω

C_ISS

C_OSS

C_RSS

R_G

V_DS= -10V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

6.7

11.5

1.0

2.0

3.5

3.6

20.8

12.7

13.1

3.9

Total Gate Charge (V_GS= -4.5V)

Total Gate Charge (V_GS= -8V)

Gate-Source Charge

Q_G

V_DS= -10V, I_D= -4.9A

Q_GS

Q_GD

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_DD= -10V, V_GS= -4.5V,

R_L= 2.6Ω, R_G= 1Ω

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_RR

I_S= -3.9A, di/dt = 100A/μs

Q_RR

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

3 of 10

www.diodes.com

October 2019

DMC1028UVT

Document number: DS39562 Rev. 5 - 2

1 234 5 6 7...10

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