Datasheet > DF2S16FS(TL3CNOI,E

DF2S16FS(TL3CNOI,E

更新时间： 2024-02-20 15:34:21

品牌	Logo	应用领域
东芝 - TOSHIBA		测试光电二极管
页数	文件大小	规格书
7页	168K
描述
Zener Diode, 16V V(Z), 5.56%, Silicon, Unidirectional

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DF2S16FS(TL3CNOI,E 技术参数

生命周期：	Obsolete	包装说明：	R-PDSO-F2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.75
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JESD-30 代码：	R-PDSO-F2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性：	UNIDIRECTIONAL	标称参考电压：	16 V
表面贴装：	YES	技术：	ZENER
端子形式：	FLAT	端子位置：	DUAL
最大电压容差：	5.56%	工作测试电流：	5 mA
Base Number Matches：	1

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DF2S16FS

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

VESD

±12

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

4. Electrical Characteristics (Unless otherwise specified, Ta = 25)

VRWM: Working peak reverse

voltage

VZ: Zener voltage

VBR: Reverse breakdown voltage

ZZ: Dynamic impedance

IZ: Zener current

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

IF: Forward current

VF: Forward voltage

Fig. 4.1 Definitions of Electrical Characteristics

Characteristics

Symbol

Note

Test Condition

Min

Typ.

Max

Unit

Working peak reverse voltage

VRWM



Zener voltage

(Reverse breakdown voltage)

(VBR)

IZ = 5 mA

(IBR)

15.3

16.0

17.1

Dynamic impedance

IZ = 5 mA

(IBR)



Ω

Reverse current

VRWM = 12 V



0.5

µA

Total capacitance

VR = 0 V, f = 1 MHz



2014-07-18

Rev.3.0

123 4 5 6 7

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