DF2S16FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S16FS
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
0.6±0.05
A
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
0.2
±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.1±0.05
M
0.07
A
Characteristic
Power dissipation
Symbol
Rating
Unit
+0.02
0.48
P*
150
150
mW
°C
-0.03
Junction temperature
T
j
Storage temperature range
T
stg
−55~150
°C
fSC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
⎯
⎯
TOSHIBA
1-1L1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 0.0006 g (typ.)
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Pad Dimension (Reference) Unit : mm
0.85
0.26
0.21
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Zener voltage
Symbol
Test Condition
= 5 mA
Min
Typ.
Max
Unit
V
Z
―
I
I
15.3
―
16.0
―
17.1
35
V
Ω
Z
Z
Dynamic impedance
Reverse current
―
= 5 mA
Z
Z
I
―
V
V
= 12 V
―
―
0.5
―
μA
pF
R
R
R
Total capacitance
CT
―
= 0 V, f =1 MHz
―
10
1
2007-11-01