Datasheet > DF2S2.0S

DF2S2.0S

更新时间： 2024-02-19 04:08:51

品牌	Logo	应用领域
东芝 - TOSHIBA		测试光电二极管
页数	文件大小	规格书
3页	133K
描述
DIODE 2 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ULTRA SMALL, SESC, 1-1K1A, 2 PIN, Voltage Regulator Diode

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技术参数
数据手册

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DF2S2.0S 技术参数

生命周期：	Obsolete	包装说明：	R-PDSO-F2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.81	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JESD-30 代码：	R-PDSO-F2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性：	UNIDIRECTIONAL	最大功率耗散：	0.15 W
认证状态：	Not Qualified	标称参考电压：	2 V
表面贴装：	YES	技术：	ZENER
端子形式：	FLAT	端子位置：	DUAL
最大电压容差：	7.5%	工作测试电流：	5 mA
Base Number Matches：	1

DF2S2.0S 数据手册

DF2S2.0S

TOSHIBA Diodes for Protecting Against ESD

DF2S2.0S

Product for Use Only as Protection against Electrostatic Discharge (ESD)

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

Unit: mm

z 2-pin ultra-small package suitable for high-density mounting

Abusolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

150*

150

°C

Junction temperature

Storage temperature range

stg

−55 to 150

°C

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

―

JEDEC

JEITA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/

“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

1-1K1A

TOSHIBA

Weight: 1.1 mg(typ.)

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

= 5mA

Min

Typ.

Max

Unit

1.85

―

2.0

―

2.15

150

120

―

Ω

Dynamic impedance

Reverse current

= 5mA

= 1V

―

μA

Total capacitance

―

= 0 V, f = 1 MHz

Guaranteed Level of ESD Immunity

Marking

Equivalent Circuit (Top View)

Test Condition

ESD Immunity Level

±6kV

IEC61000-4-2

(Contact discharge)

Criterion: No damage to device elements

2008-11-11

12 3

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