Datasheet > DF11MR12W1M1HF_B67

DF11MR12W1M1HF_B67

更新时间： 2023-09-03 20:35:41

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
21页	915K
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PressFIT

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DF11MR12W1M1HF_B67 数据手册

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DF11MR12W1M1HF_B67

™

EasyPACK module

4 Diode, Boost

Diode, Boost

Table 8

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

Unit

Repetitive peak reverse

voltage

T_vj= 25 °C

1200

Implemented forward

current

I_FN

I_F

I_FRM

I²t

Continuous DC forward

current

Repetitive peak forward

current

I²t - value

t_P= 1 ms

t_P= 10 ms, V_R= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

193

169

165

A²s

Table 9

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.55

1.95

2.10

Unit

Min.

Max.

Forward voltage

V_F

I_RM

Q_r

I_F= 25 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

2.05

Peak reverse recovery

current

V_CC= 600 V, I_F= 25 A,

-di_F/dt = 2300 A/µs

(T_vj= 150 °C)

Recovered charge

V_CC= 600 V, I_F= 25 A,

-di_F/dt = 2300 A/µs

(T_vj= 150 °C)

0.21

0.03

1.75

µC

Reverse recovery energy

E_rec

V_CC= 600 V, I_F= 25 A,

-di_F/dt = 2300 A/µs

(T_vj= 150 °C)

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per diode

K/W

°C

Temperature under

switching conditions

-40

150

Datasheet

Revision 0.10

2022-11-24

1...3 4 567 8 9...21

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