DE475-501N44A
RFꢀPowerꢀMOSFETꢀ
Symbolꢀ
TestꢀConditions
CharacteristicꢀValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
min.ꢀ
typ.ꢀ
max.ꢀ ꢀ
RGꢀ
Cissꢀ
ꢀ
ꢀ
ꢀ
0.3ꢀ ꢀ
5100ꢀ
ꢀꢀ
pFꢀ
pFꢀ
ꢀ
ꢀ
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSS(max),ꢀꢀ
fꢀ=ꢀ1ꢀMHzꢀ
Coss
ꢀ
300ꢀ
ꢀ
Crss
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
92ꢀ
46ꢀ
5ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
pFꢀ
pFꢀ
nsꢀ
nsꢀ
nsꢀ
nsꢀ
nCꢀ
nCꢀ
BackꢀMetalꢀtoꢀanyꢀPinꢀ
ꢀ
C
strayꢀ
Td(on)
Tonꢀ
ꢀ
ꢀ
VGSꢀ=ꢀ15ꢀV,ꢀVDSꢀ=ꢀ0.8ꢀVDSSꢀꢀꢀ
IDꢀ=ꢀ0.5ꢀIDMꢀꢀ
RGꢀ=ꢀ0.2ꢀꢀꢀ(External)ꢀꢀ
5ꢀ
Td(off)
Toffꢀ
5ꢀ
ꢀ
ꢀ
8ꢀ
Qg(on)
ꢀ
155ꢀ
35ꢀ
VGSꢀ=ꢀ10ꢀV,ꢀVDSꢀ=ꢀ0.5ꢀVDSSꢀꢀꢀ
IDꢀ=ꢀ0.5ꢀID25ꢀꢀ
Qgsꢀ
ꢀ
Qgdꢀ
ꢀ
87ꢀ
ꢀ
nCꢀ
SourceꢁDrainꢀDiodeꢀ
CharacteristicꢀValuesꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified)ꢀꢀ
Symbolꢀ
ISꢀ
TestꢀConditionsꢀ
min.ꢀ
ꢀ
max.ꢀ ꢀ
44ꢀ
VGSꢀ=ꢀ0ꢀVꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Aꢀ
Aꢀ
Vꢀ
Repetitive;ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJMꢀ
ꢀ
ISMꢀ
288ꢀ
1.5ꢀ
IFꢀ=ꢀIS,ꢀVGSꢀ=ꢀ0ꢀV,ꢀ
Pulseꢀtest,ꢀtꢀ≤ꢀ300ꢀꢂs,ꢀdutyꢀcycleꢀ≤ꢀ2%ꢀꢀ
VSD
ꢀ
ꢀ
ꢀ
ꢀ
Trrꢀ
200ꢀ
0.6ꢀ
ꢀ
ꢀ
nsꢀ
IFꢀ=ꢀIS,ꢀꢁdi/dtꢀ=ꢀ100A/ꢂs,ꢀꢀ
VRꢀ=ꢀ100Vꢀ
QRM
ꢀ
ꢂCꢀ
IRM
ꢀ
ꢀ
ꢀ
14ꢀ
ꢀ
Aꢀ
CAUTION:ꢀOperationꢀatꢀorꢀaboveꢀtheꢀMaximumꢀRatingsꢀvaluesꢀmayꢀimpactꢀdeviceꢀreliabilityꢀorꢀcauseꢀpermanentꢀdamageꢀtoꢀtheꢀdevice.ꢀ
ꢀ
Informationꢀinꢀthisꢀdocumentꢀisꢀbelievedꢀtoꢀbeꢀaccurateꢀandꢀreliable. IXYSRFꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀinformationꢀpubꢁ
lishedꢀinꢀthisꢀdocumentꢀatꢀanyꢀtimeꢀandꢀwithoutꢀnotice.ꢀ
Forꢀdetailedꢀdeviceꢀmountingꢀandꢀinstallationꢀinstructions,ꢀseeꢀtheꢀ“Device Installation & Mounting Instructions”ꢀtechnicalꢀnoteꢀonꢀtheꢀ
IXYSRFꢀwebꢀsiteꢀat;ꢀꢀ
ꢀ
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdfꢀ
IXYSꢀRFꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀlimits,ꢀtestꢀconditionsꢀandꢀdimensions.ꢀ
IXYSꢀRFꢀꢀMOSFETSꢀareꢀcoveredꢀbyꢀoneꢀorꢀmoreꢀofꢀtheꢀfollowingꢀU.S.ꢀpatents:ꢀ
4,835,592ꢀ
5,034,796ꢀ
5,381,025ꢀ
4,860,072ꢀ
5,049,961ꢀ
5,640,045ꢀ
4,881,106ꢀ
5,063,307ꢀ
ꢀ
4,891,686ꢀ
5,187,117ꢀ
ꢀ
4,931,844ꢀ
5,237,481ꢀ
ꢀ
5,017,508ꢀ
5,486,715ꢀ
ꢀ