DIODE MODULE
DD110F/KD110F
UL;E76102(M)
Power Diode Module DD110F series are designed for various rectifier circuits. DD110F
has two diode chips connected in series in 25mm (1inch) width package and the mounting
base is elctrically isolated from elements for simple heatsink construction. Wide voltage
rating up to, 1,600V is avaiable for various input voltage.
92
20
20
20
2-
6
● Isolated mounting base
● Two elements in a package for simple (single and three phase) bridge
connections
● Highly reliable glass passivated chips
● High surge current capability
�
M5X10
(Applications)
Various rectifiers, Battery chargers, DC motor drives
DD
2�
2�
1�
1�
3�
3�
80±0.2
KD
Unit:a
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
Unit
DD110F40
400
DD110F80
800
DD110F120
DD110F160
1600
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
1200
1300
V
V
480
960
1700
Symbol
Item
Conditions
Ratings
110
Unit
A
IF(AV)
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180°conduction, Tc:88℃
F (RMS)
I
172
A
Single phase, half wave, 180°conduction, Tc:88℃
1
FSM
I
Z
A
/ cycle, 50/60H , peak value, non-repetitive
2300/2550
26500
2
2
2
2
I
I t
Value for one cycle of surge current
A.C.1minute
A S
t
ISO
V
2500
V
℃
℃
Isolation Breakdown Voltage(R.M.S)
Junction Temperature
Tj
-40 to +125
-40 to +125
2.7(28)
2.7(28)
170
Tstg
Storage Temperature
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Termina(l M5) Recommended Value 1.5-2.5(15-25)
Mounting
Torque
N・m
(㎏f・B)
Mass
g
■Electrical Characteristics
Symbol
IRRM
Item
Conditions
Ratings
20
Unit
mA
V
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Thermal Impedance, max.
DRM
at V , single phase, half wave. Tj=125℃
Forward current 350A,Tj=25℃,Inst. measurement
Junction to case
VFM
1.45
0.25
Rth(j-c)
℃/W
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com