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DCX53-16-13 PDF预览

DCX53-16-13

更新时间： 2024-01-21 13:17:37
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 230K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DCX53-16-13 数据手册

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DCX53/-16  
PNP SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary NPN Type Available (DCX56)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
3 E  
2 C  
1 B  
•
•
C 4  
1
ASE  
B
3
•
•
•
EMITTER  
EW  
VI  
TOP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-100  
-80  
-5  
-1.5  
-1  
Unit  
V
V
V
A
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)  
JA  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
C = -100μA, IE = 0  
-100  
-80  
-5  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -10mA, IB = 0  
E = -10μA, IC = 0  
nA  
μA  
-100  
-20  
VCB = -30V, IE = 0  
VCB = -30V, IE = 0, TA = 150°C  
VEB = -5V, IC = 0  
Collector Cutoff Current  
ICBO  
IEBO  
⎯
⎯
⎯
⎯
Emitter Cutoff Current  
-100  
nA  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
-0.5  
-1.0  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
⎯
⎯
I
I
C = -500mA, IB = -50mA  
C = -500mA, VCE = -2V  
63  
40  
⎯
⎯
⎯
⎯
⎯
⎯
250  
250  
⎯
⎯
⎯
⎯
IC = -5mA, VCE = -2V  
DCX53, DCX53-16  
I
I
I
C = -500mA, VCE = -2V  
C = -150mA, VCE = -2V  
C = -150mA, VCE = -2V  
DC Current Gain  
hFE  
DCX53  
63  
DCX53-16  
100  
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
Output Capacitance  
IC = -50mA, VCE = -5V,  
f = 100MHz  
VCB = -10V, f = 1MHz  
200  
MHz  
pF  
fT  
⎯
⎯
⎯
25  
Cobo  
⎯
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS31160 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DCX53/-16  
© Diodes Incorporated  
1234

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