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DCX56-16-13 PDF预览

DCX56-16-13

更新时间： 2024-01-27 10:23:51
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 235K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DCX56-16-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended零件包装代码：SOT-89
包装说明：SMALL OUTLINE, R-PDSO-F4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：7.95外壳连接：COLLECTOR
最大集电极电流 (IC)：0.001 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：100
JESD-30 代码：R-PDSO-F4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

DCX56-16-13 数据手册

 浏览型号DCX56-16-13的Datasheet PDF文件第2页浏览型号DCX56-16-13的Datasheet PDF文件第3页浏览型号DCX56-16-13的Datasheet PDF文件第4页 
DCX56/-16  
NPN SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary PNP Type Available (DCX53)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
3 E  
2 C  
1 B  
•
•
C 4  
T
1
ASE  
B
3
•
•
•
EW  
EMITTER  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
100  
80  
5
1
Unit  
V
V
V
A
Collector Current  
Peak Pulse Current  
1.5  
A
ICM  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
Symbol  
Value  
1
Unit  
W
PD  
-55 to +150  
125  
°C  
Tj, TSTG  
°C/W  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Rθ  
JA  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
C = 100μA, IE = 0  
100  
80  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 10mA, IB = 0  
5.0  
E = 10μA, IC = 0  
0.1  
20  
VCB = 30V, IE = 0  
VCB = 30V, IE = 0, TA = 150°C  
VEB = 5.0V, IC = 0  
Collector-Base Cutoff Current  
ICBO  
IEBO  
⎯
⎯
⎯
⎯
μA  
Emitter-Base Cutoff Current  
100  
nA  
ON CHARACTERISTICS (Note 4)  
63  
40  
⎯
⎯
250  
250  
0.5  
1.0  
IC = 5.0mA, VCE = 2.0V  
DCX56, DCX56-16  
⎯
⎯
I
I
I
C = 500mA, VCE = 2.0V  
C = 150mA, VCE = 2.0V  
C = 150mA, VCE = 2.0V  
DC Current Gain  
hFE  
DCX56  
63  
100  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DCX56-16  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
SMALL SIGNAL CHARACTERISTICS  
VCE(SAT)  
VBE(ON)  
IC = 500mA, IB = 50mA  
IC = 500mA, VCE = 2.0V  
V
⎯
IC = 50mA, VCE = 5V,  
f = 100MHz  
Current Gain-Bandwidth Product  
200  
MHz  
pF  
fT  
⎯
⎯
⎯
Output Capacitance  
15  
Cobo  
⎯
VCB = 10V, IE = 0, f = 1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS31161 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DCX56/-16  
© Diodes Incorporated  
1234

中文翻译

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DCX56-16-13 替代型号

型号 品牌 替代类型 描述 数据表
BCX5616TA DIODES

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 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,

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