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DCX69-16-13 PDF预览

DCX69-16-13

更新时间： 2024-10-01 10:01:19
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 138K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DCX69-16-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：19 weeks
风险等级：5.72外壳连接：COLLECTOR
最大集电极电流 (IC)：1 A集电极-发射极最大电压：20 V
配置：SINGLE最小直流电流增益 (hFE)：60
JESD-30 代码：R-PSSO-F3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：FLAT端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

DCX69-16-13 数据手册

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DCX69/-16/-25  
PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary NPN Type Available (DCX68)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
3 E  
2 C  
1 B  
•
•
C 4  
T
1
ASE  
B
3
•
•
•
EMITTER  
EW  
OP VI  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Peak Pulse Power  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-25  
-20  
-5.0  
-1.0  
-2.0  
Unit  
V
V
V
A
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
JA  
-55 to +150  
°C  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
IC = -10μA, IE = 0  
-25  
-20  
-5.0  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
IC = -1mA, IB = 0  
IE = -10μA, IC = 0  
nA  
μA  
-100  
-10  
V
CB = -25V, IE = 0  
Collector-Base Cutoff Current  
ICBO  
IEBO  
⎯
⎯
⎯
⎯
VCB = -25V, IE = 0, TA = 150°C  
VEB = -5.0V, IC = 0  
Emitter-Base Cutoff Current  
-100  
nA  
ON CHARACTERISTICS (Note 4)  
50  
60  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
375  
250  
375  
-0.5  
⎯
⎯
⎯
⎯
⎯
V
VCE = -10V, IC = -5.0mA  
DCX69, DCX69-16, DCX69-25  
V
V
V
CE = -1.0V, IC = -1.0A  
CE = -1.0V, IC = -500mA  
CE = -1.0V, IC = -500mA  
DC Current Gain  
DCX69  
DCX69-16  
DCX69-25  
85  
100  
160  
⎯
hFE  
VCE = -1.0V, IC = -500mA  
IC = -1.0A, IB = -100mA  
VCE = -10V, IC = -5mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
Output Capacitance  
VCE(SAT)  
VBE(ON)  
⎯
⎯
-0.7  
-1.0  
V
⎯
V
CE = -1.0V, IC = -500mA  
VCE = -5.0V, IC = -50mA,  
f = 100MHz  
40  
200  
17  
MHz  
pF  
fT  
⎯
⎯
Cobo  
⎯
VCB = -10V, f = 1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS31264 Rev. 5 - 2  
1 of 4  
www.diodes.com  
DCX69/-16/-25  
© Diodes Incorporated  
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中文翻译

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