Datasheet > DCR106-6

DCR106-6

更新时间： 2024-10-02 04:09:07

品牌	Logo	应用领域
DCCOM		可控硅整流器
页数	文件大小	规格书
1页	53K
描述
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts

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DCR106-6 数据手册

DCR106-3

THRU

DCR106-8

DC COMPONENTS CO., LTD.

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

VOLTAGE RANGE - 100 to 600 Volts

CURRENT - 4.0 Amperes

Description

* Driven directly with IC and MOS device

* Feature proprietary, void-free glass passivated chips

* Available in voltage ratings from 100 to 600 volts

* Sensitive gate trigger current

* Designed for high volume, line-powered control

application in relay lamp drivers, small motor controls,

gate drivers for large thyristors

TO-126

.304(7.72)

.285(7.52)

.105(2.66)

.095(2.41)

.152(3.86)

.041(1.05)

.037(0.95)

Pinning

1 = Cathode, 2 = Anode, 3 = Gate

.055(1.39)

.138(3.50)

.045(1.14)

.154(3.91)

.150(3.81)

Absolute Maximum Ratings(TA=25oC)

.279(7.09)

.275(6.99)

Characteristic

Symbol

Rating

Unit

3oTyp

2 3

DCR106-3

DCR106-4 VDRM,

100

200

400

600

Peak Repetitive Off-State

Voltage and Reverse Voltage

3oTyp

.022

.052(1.32)

.048(1.22)

DCR106-6

DCR106-8

VRRM

IT(RMS)

ITSM

.620(15.75)

.600(15.25)

On-State RMS Current

4.0

(TA=57oC, 180o Conduction Angles)

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60Hz)

Typ

.032(0.81)

.028(0.71)

(0.55)

3oTyp

Forward Peak Gate Current

IGM

PGM

PG(AV)

1.0

0.5

.189(4.80)

.171(4.34)

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Operating Junction Temperature

Storage Temperature

0.1

-40 to +110

-40 to +150

Dimensions in inches and (millimeters)

TSTG

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Peak Repetitive Forward or Reverse

Off-State Blocking Current

Symbol

Min

Typ

Max

200

2.0

200

0.8

5.0

Unit

Test Conditions

TJ=25oC

IDRM, IRRM

µA

VAK=Rated VDRM or VRRM

RGK=1KΩ

TJ=110oC

Peak Forward On-State Voltage

Continuous DC Gate Trigger Current

Continuous DC Gate Trigger Voltage

DC Holding Current

VTM

IGT

µA

ITM=4A Peak

VAK=7V DC, RL=100Ω

RGK=1KΩ

VGT

Critical Rate-of-Rise of Off-State Voltage

Gate Controlled Turn-on Time(tD+tR)

Thermal Resistance, Junction to Case

dv/dt

Tgt

8.0

2.2

3.0

V/µS

µsec

oC/W

RGK=1KΩ

IGT=10mA

RθJC

中文翻译

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与DCR106-6相关器件

型号	品牌	获取价格	描述	数据表
DCR106-8	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 1
DCR1080G18	DYNEX	获取价格	Silicon Controlled Rectifier, 1701A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, G, 4 P
DCR1080G20	DYNEX	获取价格	Silicon Controlled Rectifier, 1701A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, G, 4 P
DCR1080G22	DYNEX	获取价格	Phase Control Thyristor
DCR1080G22	LGE	获取价格	Phase Control Thyristor
DCR1110F50	DYNEX	获取价格	Phase Control Thyristor
DCR1110F52	DYNEX	获取价格	Phase Control Thyristor
DCR1120F28	DYNEX	获取价格	Phase Control Thyristor
DCR1120F30	DYNEX	获取价格	Phase Control Thyristor
DCR1120F32	DYNEX	获取价格	Phase Control Thyristor

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