Datasheet > DBB04G

DBB04G

更新时间： 2024-09-30 23:46:31

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其他 - ETC		二极管
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2页	39K
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DBB04G 数据手册

Ordering number :EN2793A

DBB04

Diffused Junction Silicon Diode

0.4A Single-Phase Bridge Rectifier

Features

Package Dimensions

unit:mm

· Single-phase bridge rectifier use.

· Plastic molded structure.

1205

· Peak reverse voltage:V =200, 600V.

· Average rectified current:I =0.4A.

[DBB04]

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Peak Reverse Voltage

Symbol

Conditions

DBB04C

DBB04G

Unit

200

→

600

0.4

Average Recitified Current

Surge Forward Current

Junction Temperature

Storage Temperature

Ta=40˚C

50Hz sine wave, 1cycle

→

FSM

150

˚C

→

Tstg

–40 to +150

→

Electrical Characteristics at Ta = 25˚C, per constituent element of bridge

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.05

Forward Voltage

Reverse Current

I =0.2A

:At each V

R RM

µA

Electrical Connection

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/62096GI (KOTO)/N098TA, TS No.2793-1/2

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