Datasheet > DBB08G

DBB08G

更新时间： 2024-09-30 23:46:31

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其他 - ETC		二极管
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2页	54K
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数据手册

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DBB08G 数据手册

Ordering number :EN2772B

DBB08

Diffused Junction Silicon Diode

0.8A Single-Phase Bridge Rectifier

Features

Package Dimensions

unit:mm

· Plastic molded structure and ultrasmall package

making it easy to make DBB08-applied sets smaller.

· Two type of package available, surface mount type

and insertion type.

1189

Surface mount type (TM emboss taping)

[DBB08]

· Glass passivation for high reliability.

Electrical Connection

unit:mm

1247

Substrate inserting type (LT stick)

[DBB08]

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Peak Reverse Voltage

Symbol

Conditions

DBB08C

DBB08G

Unit

200

→

600

0.8

0.5

Average Recitified Current

Alumina board*

PCB

→

Surge Forward Current

Junction Temperature

Storage Temperature

50Hz sine wave, 1cycle

→

FSM

150

→

˚C

Tstg

–40 to +150

→

Electrical Characteristics at Ta = 25˚C, per constituent element of bridge

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.05

Forward Voltage

Reverse Current

I =0.4A

µA

:At each V

R RM

Thermal Resistance

Rth(j-a)

˚C/W

Mounted on Cu foil (1mm× 1mm) on alumina board

Mounted on PCB

134 ˚C/W

Note*:Surface mount type.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/62096GI (KOTO)/92294MO 8-7589/4218TA, TS 8-2176 No.2772-1/2

中文翻译

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