Datasheet > DB2510P

DB2510P

更新时间： 2024-01-28 18:41:26

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描述
25 AMP SILICON BRIDGE RECTIFIERS

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技术参数
数据手册

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DB2510P 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.77	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.2 V
最大非重复峰值正向电流：	300 A	元件数量：	4
最高工作温度：	125 °C	最大输出电流：	25 A
最大重复峰值反向电压：	1000 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

DB2510P 数据手册

DIOTEC ELECTRONICS CORP.

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A

Data Sheet No. BRDB-2500P-1C

ADBD-2500P-1C

Tel.: (310) 767-1052 Fax: (310) 767-7958

25 AMP SILICON BRIDGE RECTIFIERS

MECHANICAL SPECIFICATION

SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P

FEATURES

VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

MECHANICAL STRENGTH AND HEAT DISSIPATION

(Solder Voids: Typical < 2%, Max. < 10% of Die Area)

BUILT-IN STRESS RELIEF MECHANISM FOR

SUPERIOR RELIABILITY AND PERFORMANCE

INTEGRALLY MOLDED HEAT SINK PROVIDES VERY

LOW THERMAL RESISTANCE FOR MAXIMUM HEAT

DISSIPATION

HOLE FOR

#8 SCREW

HOLE FOR

#8 SCREW

UL RECOGNIZED - FILE #E124962

RoHS COMPLIANT

MECHANICAL DATA

Case: Case: Molded epoxy with integral heat sink

Epoxy carries a U/L Flammability rating of 94V-0

MILLIMETERS

INCHES

MIN

1.12

MILLIMETERS

INCHES

SYM

Terminals: Round silver plated copper pins or fast-on terminals

Soldering: Per MIL-STD 202 Method 208 guaranteed

Polarity: Marked on side of case

MIN

28.4

9.6

MAX

28.7

MIN

28.4

9.6

MAX

28.7

MIN

1.12

MAX

1.13

0.40

0.73

0.47

n/a

1.13

0.40

0.66

0.73

0.57

0.6

10.2 0.38

18.5 0.69

10.2 0.38

16.7 0.62

18.5 0.69

17.5

10.9

20.6

1.0

15.7

11.9

n/a

0.43

0.81

17.5

13.5

n/a

Mounting Position: Any. Through hole for #8 screw.

Max. mounting torque = 20 in-lb.

14.5

15.2

0.53

n/a

1.1

0.039 0.042

Weight: Fast-on Terminals - 0.7 Ounces (20.0 Grams)

Wire Leads - 0.55 Ounces (16.0 Grams)

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS

RATINGS

PARAMETER (TEST CONDITIONS)

SYMBOL

UNITS

VOLTS

Series Number

Maximum DC Blocking Voltage

Working Peak Reverse Voltage

Maximum Peak Recurrent Reverse Voltage

RMS Reverse Voltage

Peak Forward Surge Current. Single 60Hz Half-Sine Wave

Superimposed on Rated Load (JEDEC Method). T = 125 C

AMPS

°C

Average Forward Rectified Current @ T = 75 C

Junction Temperature Range

Storage Temperature Range

Mimimum Avalanche Voltage

Maximum Avalanche Voltage

VOLTS

Maximum Forward Voltage (Per Diode) at 12.5 Amps DC

@ T = 25 C

@T = 125 C

Maximum Reverse Current at Rated V

Minimum Insulation Breakdown Voltage (Circuit to Case)

Typical Thermal Resistance, Junction to Case

VOLTS

C/W

E41

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