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DB203S PDF预览

DB203S

更新时间: 2024-11-19 06:52:19
品牌 Logo 应用领域
SECOS 二极管光电二极管
页数 文件大小 规格书
2页 107K
描述
2.0 Amp Surface Mount Bridge Rectifiers

DB203S 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.61最小击穿电压:200 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:200 V表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

DB203S 数据手册

 浏览型号DB203S的Datasheet PDF文件第2页 
DB201S ~ DB207S  
VOLTAGE 50 V ~ 1000 V  
2.0 Amp Surface Mount Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DB1-S  
FEATURES  
z Low forward voltage drop, high current capability  
z Rating to 1000V PRV  
.047(1.2)  
.037(0.95)  
.335(8.5)  
.307(7.8)  
z Ideal for printed circuit board  
z Reliable low cost construction utilizing molded plastic technique  
results in inexpensive products  
.031(0.8)  
.023(0.6)  
.256(6.5)  
.244(6.2)  
.406(10.3)  
.391(10.0)  
z Lead tin Pb / Sn copper  
.140(0.35)  
.008(0.2)  
z The plastic material has UL flammability classification 94V-0  
.323(8.2)  
.315(8.0)  
.102(2.6)  
.089(2.2)  
MECHANICAL DATA  
.063(1.6)  
.055(1.4)  
z Polarity: As marked on Body  
z Weight:0.02 ounces, 0.38 grams  
z Mounting position: Any  
.205(5.2)  
.197(5.0)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.  
DB  
201S  
50  
35  
50  
DB  
202S  
100  
70  
DB  
DB  
DB  
DB  
DB  
SYMBOL  
PARAMETERS  
UNIT  
203S  
200  
140  
200  
204S  
400  
280  
400  
205S  
600  
420  
600  
206S  
800  
560  
800  
207S  
1000  
700  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRMS  
VDC  
V
A
A
100  
1000  
Maximum Average Forward Rectified Current  
@TA=40  
I(AV)  
2.0  
Peak Forward Surge Current 8.3 ms Single Half  
Sine-Wave Super Imposed on Rated Load  
(JEDEC Method)  
IFSM  
60  
Maximum Forward Voltage at 1.5 A DC  
VF  
IR  
1.1  
10  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
uA  
@TJ=125℃  
500  
I2t Rating for Fusing (t<8.3ms)  
I2t  
CJ  
10.4  
25  
A2s  
pF  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note2)  
RθJA  
40  
/W  
Operating and Storage temperature range  
TJ, TSTG  
-55 ~ 150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC  
2. Thermal resistance from junction to ambient mounted on P.C.B. with 0.5*0.5"(13*13mm) copper pads.  
01-June-2005 Rev. A  
Page 1 of 2  

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